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刘文军
发表时间:2015-09-26 阅读次数:3469次

基本资料

    籍贯:江苏金湖
    职称:青年研究员
    地址:上海市邯郸路220号,复旦大学微电子楼B211室
    电话:021-55664234
    Email:wjliu@fudan.edu.cn

教育与工作经历

  1. 2005~2009  复旦大学微电子学系,博士
  2. 2009~2012  新加坡南洋理工大学微电子系,博士后研究员
  3. 2012~2015  日本东京大学材料工程系,日本学术振兴会JSPS研究员
  4. 2015~至今   复旦大学微电子学院,青年研究员

        2009年7月毕业于复旦大学微电子系,获得微电子学与固体电子学博士学位。自2009年4月至2015年7月先后在新加坡南洋理工大学,新加坡制造技术研究院和日本东京大学主要从事微纳米电子器件\工艺集成,半导体器件失效分析、新型半导体材料光电子器件研究等。其中2012年至2014年受日本文部省学术振兴会(Japan Society for the Promotion of Science)资助,在日本东京大学工学院材料工程系担任日本学术振兴会(JSPS)研究员。2015年7月,作为引进人才加入复旦大学微电子学院,任青年研究员。目前,已在国内外期刊发表学术论文50余篇,其中SCI检索25篇,EI检索29篇,引用 >400次,并为IEEE T-ED, Nanoscale research letters, Solid-state electronics, Journal of the electrochemical society等国际期刊审稿。现为IEEE会员,日本应用物理协会会员。

研究方向

  1. 氧化物半导体器件与工艺;
  2. 新型电子材料器件;
  3. 传感器等。

目前在研项目

  1. 复旦大学人才引进启动资金

 

      迎校内外有志于新型微纳米电子器件研究,具有微电子、物理、化学、材料、光电等相关专业背景的本科生、研究生加入小组

 

代表性著作/论文

    加入复旦大学后: 

  1. B. Zhu, W. J. Liu, L. Wei, David W. Zhang, A. Q. Jiang, S. J. Ding, “Voltage Linearity Modulation and Polarity Dependent Conduction in Metal-Insulator-Metal Capacitors with Atomic-Layer-Deposited Al2O3/ZrO2/SiO2 Nano-Stacks,” Journal of Applied Physics, 118, 014501, 2015.
  2. X. K. Liu, J. Z. He, D. Tang, Q. Liu, J. Wen, W. J. Yu, Y. M. Lu, D. L. Zhu, W. J. Liu, P. J. Cao, S. Han, J. S. Pan, W. J. Liu, K. W. Ang, and Z. B. He, “Band alignment of atomic layer deposited high-k Al2O3/multilayer MoS2 interface determined by x-ray photoelectron spectroscopy,” Journal of Alloy compound, 650,502-507, 2015.
  3. X. K. Liu, J. Z. He, Q. Liu, D. Tang, W. J. Yu, W. J. Liu, Y. M. Lu, D. L. Zhu, W. J. Liu, P. J. Cao, and S. Han,”Low Temperature Carrier Transport Study of Monolayer MoS2 Field-effect Transistor Prepared by Chemical Vapor Deposition Under Atmospheric Pressure,” Journal of Applied Physics, to appear, 2015.

   

    加入复旦大学前:

  1. (Invited) W. J. Liu, J. Wei, X. W. Sun, H. Y. Yu, “A Study on Graphene-Metal Contact,” Crystals, 3 (1), 257-274, 2013.
  2. W. J. Liu, X. A. Tran, Y. H. Yu and X. W. Sun, “A Self-rectifying Unipolar HfOx Based RRAM using Doped Germanium Bottom Electrode,” Electrochemical and Solid-State Letters, 2 (5), Q35-Q38, 2013.
  3. W. J. Liu, H. Y. Yu, S. H. Xu, Q. Zhang, X. Zou, J. L. Wang, K. L. Pey, J. Wei, H. L. Zhu, and M. F. Li, “Understanding Asymmetric Transportation Behavior in Graphene Devices using Scanning Kelvin Probe Microscopy,” IEEE Electron Device Letter, 32(2), 128-130, 2011.
  4. W. J. Liu, H. Y. Yu, J. Wei, M. F. Li, “Impact of Process Induced Defects on the Contact Characteristics of Ti/Graphene Devices,” Electrochemical and Solid-State Letters, 14 (12), K67-K69, 2011.
  5. W. J. Liu, X. W. Sun, Z. Fang, Z. R. Wang, X. A. Tran, F. Wang, L. Wu, G. I. Ng, J. F. Zhang, J. Wei, H. L .Zhu, H. Y. Yu “Positive Bias-Induced Vth Instability in Single Layer Graphene Field Effect Transistors,” IEEE Electron Device Letter, 33 (3), 339-341, 2012.
  6. W. J. Liu, X. W. Sun, X. A. Tran, Z. Fang, Z. R. Wang, F. Wang, L. Wu, J. F. Zhang, J. Wei, H. L. Zhu and H. Y. Yu, “Vth Shift in Single Layer Graphene Field Effect Transistors and Its Correlation with Raman Inspection,” IEEE Transaction on Devices and Materials Reliability, 12(2), 478-481,2012.
  7. W. J. Liu, X. A. Tran, X. B. Liu, J. Wei, H. Y. Yu and X. W. Sun, “Characteristics of a Single-Layer Graphene Field Effect Transistor with UV/Ozone Treatment,” Electrochemical and Solid-State Letters, 2 (1), M1-M4, 2013.
  8. W. J. Liu, X. W. Sun, X. A. Tran, Z. Fang, Z. R. Wang, F. Wang, L. Wu, J. F. Zhang, J. Wei, H. L. Zhu and H. Y. Yu, “Observation of the Ambient Effect in BTI Characteristics of Back-Gated Single Layer Graphene Field Effect Transistors,” IEEE Transaction on Electron Devices, 60 (8), 2682-2686, 2013.
  9. W. J. Liu, X. A. Tran, Z. Fang, H. D. Xiong and H. Y. Yu, “A Self-Compliant One-Diode-One-Resistor Bipolar Resistive Random Access Memory for Low Power Application,” IEEE Electron Devices Letters, 35(2), 196-198, 2014.
  10. W. J. Liu, M. F. Li, S. H. Xu, Q. Zhang, Y. H. Zhu, K.L. Pey, H. L. Hu, Z.X. Shen, X. Zou, J. L. Wang, J. Wei, H. L. Zhu, and H.Y. Yu, “Understanding the Contact Characteristics in Single or Multi-Layer Graphene Devices: the Impact of Defects (Carbon Vacancies) and the Asymmetric Transportation Behavior,” IEEE International Electron Device Meeting (IEDM), 2010, 560-563.
  11. W. J. Liu, Z. Y. Liu, Daming Huang, C. C. Liao, L. F. Zhang, Z. H. Gan, Waisum Wong, C. Shen, Ming-Fu Li, “On-The-Fly Interface Trap Measurement and Its Impact on the Understanding of NBTI Mechanism for p-MOSFETs with SiON Gate Dielectric,” IEEE International Electronic Device Meeting (IEDM), 2007, 813-816.
  12. W. J. Liu, Daming Huang, Q. Q. Sun, C. C. Liao, L. F. Zhang, Z. H. Gan, Waisum Wong, Ming-Fu Li, “Studies of NBTI in pMOSFETs with Thermal and Plasma Nitrided SiON Gate Oxides by OFIT and FPM Methods,” IEEE International Reliability Physics Symposium (IRPS), 2009, 964-968.
  13. W. J. Liu, H.Y. Yu, H. L. Hu, V. Tjoa, J. Wei, “Impact of Process and Thermal Annealing on Ti/Graphene Contact,” International Conference on Material for Advanced Technologies, 2011.
  14. W. J. Liu, H.Y. Yu, B. K. Tay, S. H. Xu, Y. Y. Wang, H. L. Hu, Z. X. Shen, J. Wei, M. F. Li, “Physical and Electrical Characterization of Junction between Single-Layer Graphene (SLG) and Ti Prepared by Various Processes,” IEEE International Workshop on Junction Technology (IWTJ), 1-3, 2010.
  15. W. J. Liu, X. A. Tran, H, Y, Yu, X. W. Sun, “Hysteresis Caused by the Ambient in Single Layer Graphene Field Effect Transistors,” International Conference of Young Researchers on Advanced Materials, 2012.
  16. W. J. Liu, H. Y. Yu, X. A. Tran, X. W. Sun “Characteristics of graphene field effect transistor treated by annealing,” the 5th IEEE International Nanoelectronics Conference, 2013.
  17. W. J. Liu, “Threshold voltage shift in back-gated single-layer graphene field-effect transistor,” ATI Nano-Carbon Meeting at Zao, Yamagata, 2013.
  18. W. J. Liu, D. M. Huang, Z. Y. Liu, Y. Luo, C. C. Liao, L. F. Zhang, Z. H. Gan, Waisum Wong, Ming-Fu Li, “Investigations of NBTI by Conventional and New Measurement Methods for p-MOSFETs,” IEEE Nano-Electronics Conference, 2008,1758-1761.
  19. W. J. Liu, Z. Y. Liu, Y. Luo, G. F. Jiao, X. Y. Huang, D. Huang, C. C. Liao, L. F. Zhang, Z. H. Gan, W. Wong, Ming-Fu Li, “Characteristics of NBTI in pMOSFETs with Thermally and Plasma Nitrided Gate Oxides,” IEEE International Conference on Solid-State and Integrated-Circuit Technology, 2008, 648-650.
  20. W. J. Liu, K. Nagashio, A. Toriumi, “Defects generation in mono- and bi-layer graphene in O2 annealing,” Japanese Society of Applied Physics, pp. 19p-E2-08, 2014.
  21. W. J. Liu, K. Nagashio, T. Nishimura, and A. Toriumi, “Defect Generation in Mono-layer Graphene in O2-PDA and FGA,” International conference on Solid State Devices and Materials (SSDM), 340-341, 2014.
  22. W. J. Liu, Q. Mi, J. Qin, “Influence of Broad Beam Cold Cathode and End Hall Ion Sources on Transmissivity and stress,” Applied Optics (Chinese), 26(2), 51-53, 2005
  23. X. A. Tran, W. J. Liu, “Understanding of Rectifying Behavior in AlOy Based RRAM by Low Noise Frequency Measurement,” IEEE Conference on Electron Devices and Solid-State Circuits (EDSSC), 2015.
  24. J. L. Qi, K. Nagashio, W. J. Liu, T. Nishimura, A. Toriumi, “Epitaxial CVD graphene growth on Cu/Mica for gate-stack research,” International conference on Solid State Devices and Materials (SSDM), 432-433, 2013
  25. Z. Fang, H. Y. Yu, W. J. Liu, Z. R. Wang, X. A. Tran, B. Gao, and J. F. Kang, “Temperature Instability of Resistive Switching on HfOx-Based RRAM Devices,” IEEE Electron Device Letters, 31 (5), 476-478, 2010.
  26. X. A. Tran, H.Y. Yu, Y.C. Yeo, L. Wu, W. J. Liu, Z.R. Wang, Z. Fang, K.L. Pey, X.W. Sun, A.Y. Du, B.Y. Nguyen, M.F. Li “A High Yield HfOx Based Unipolar Resistive RAM Employing Ni Electrode Compatible with Si-Diode Selector for Cross-Bar Integration,” IEEE Electron Device Letter, 32 (3), 396, 2011.
  27. Z. R. Wang, V. Tjoa, L. Wu, W.J. Liu, Z. Fang, X.A. Tran, J. Wei, and H.Y. Yu “Mechanism of Different Switching Directions in Graphene Oxide Based RRAM,” Journal of Electrochemistry Society, 59, K177-K182, 2012.
  28. X. A. Tran, W. Zhu, W. J. Liu, H. Y. Yu, “Self-rectifying Bipolar Resistive Switching Based HfOx RRAM,” Electrochemical and Solid-State Letters, 2012, to appear.
  29. L. Wu, H. Y. Yu, K. S. Yew, W. J. Liu, T. T. Le, T.L. Duan, X. F. Yu, D.Y. Lee, K.Y. Hsu, J. Xu, H. J. Tao, M. Cao, “Multi-deposition Multi Room-Temperature Annealing via Ultraviolet Ozone for HfZrO High-k and Integration With a TiN Metal Gate in a Gate-Last Process,” IEEE Transaction Electron Devices, 58, 2177, 2011.
  30. Z. R. Wang, A. Y. Du, L. Wu, Z. Fang, X. A. Tran, W. J. Liu, W. Zhu and H. Y. Yu, “Highly uniform, self-compliance and forming free ALD HfO2 based RRAM with Ge Doping,” IEEE Transactions on Electron Devices, 59(4), 1203, 2012.
  31. X. A. Tran, W. Zhu, W. J. Liu, Y.C. Yeo, B.Y. Nguyen, and H.Y. Yu, “Self-Rectifying and Self compliance Bipolar RRAM,” IEEE Transaction on Electron Devices, 60 (1), 391-395, 2013.
  32. L. Wu, H.Y. Yu, K.S. Yew, D. S. Ang, W. J. Liu, T. T. Le, T. L. Duan, X. F. Yu, D.Y. Lee, K.Y. Hsu, J. Xu, H. J. Tao, M. Cao, “Novel Multi Deposition Multi Room-Temperature Annealing Technique via Ultraviolet-Ozone to Improve High-K/Metal (HfZrO/TiN) Gate Stack Integrity for a Gate-Last Process,” IEEE International Electron Device Meeting (IEDM), 2010, 273-276.
  33. Z. Fang, H.Y. Yu, W. J. Liu, K.L. Pey, X. Li, L. Wu, Z.R. Wang, Patrick G.Q. Lo, B. Gao, J. F. Kang, “Bias Temperature Instability of Binary Oxide Based (HfOx) ReRAM,” IEEE International Reliability Physics Symposium (IRPS), 2010, 964-965.
  34. Z. Fang, H. Y. Yu, X. Li, K. L. Pey, W. J. Liu, “High Performance HfOx-Based Resistive RAM Devices and Its Temperature Dependent Switching,” IEEE International Symposium on Integrated Circuits (ISIC),2009,B26.
  35. Z. Fang, H.Y. Yu, W. J. Liu, N. Singh, and G.Q. Lo, “Resistive RAM Based on HfOx and Its Temperature Instability Study,” International Conference on Electrical and Communication Engineering, 2010, 907-909.
  36. X. Ho, H. J. Lu, W. J. Liu, J. N. Tey, C. K. Cheng, E. Kok, J. Wei, “Electrical and Optical Properties of Hybrid Transparent Conductors That Combine Metal Grids with Graphene Films,” Material Research Society Fall Meeting, San Francisco, Nov. 25-30, 2012.
  37. X. A. Tran, W. J. Liu, H. Y. Yu, W. G. Zhu, “Self-rectifying Bipolar Resistive Switching Based HfOx RRAM for Crossbar Array Application,” 5th Material Research Society of Singapore: Conference on Advanced Materials, 2012.
  38. X. Ho, H. J. Lu, W. J. Liu, J. N. Tey, C. K. Cheng, E. Kok, J. Wei, “Electrical and optical properties of hybrid transparent electrodes that use metal grids and graphene films,” Journal of Material Research, 2013, 34, 1-7.
  39. X. A. Tran, H.Y. Yu ,B. Gao, J.F. Kang, W. J. Liu, Z. Fang, Z.R. Wang , Y.C. Yeo, B.Y. Nguyen, M.F. Li , W. Zhu “A Unipolar HfOx Based RRAM with NiSi Electrode,” IEEE Electron Device Letter, 32 (4), 585, 2012.
  40. X.A. Tran, W. Zhu, W. J. Liu, B. Gao, J. F. Kang, Z. Fang, Z. R. Wang, B.Y. Nguyen, M.F. Li, and H.Y. Yu, “A Self-retifying AlOx Based Bipolar RRAM with sub-50 μA current for Cross-bar array architecture,” IEEE Electron Devices Letter, 33 (10), 1402-1404, 2012.
  41. Y. Luo, D. Huang, W. J. Liu, Ming-Fu Li, “Boundary condition and initial value effects in the reaction diffusion model of interface traps generation/recovery,” Journal of Semiconductors, 30(7),074008, 2009.
  42. (Invited) Ming-Fu Li, Daming Huang, C. Shen, T. Yang, W. J. Liu and Z. Y. Liu, “Understand NBTI Mechanism by Developing Novel Measurement Techniques,” IEEE Transactions on Device and Material Reliability, 8, 62-71, 2008.
  43. (Invited) Ming-Fu Li, D. Huang, W. J. Liu, Z. Y. Liu, “New Insights of BTI degradation in MOSFETs with SiON Gate Dielectrics,” Electrochemistry Society (ECS) Transactions, 901, 794, 2009.
  44. D. Huang, W. J. Liu, Z. Y. Liu, C. C. Liao , L. F. Zhang, Z. H. Gan, W. Wong ,and M. F. Li, “A Modified Charge Pumping Method for the Characterization of Interface Trap Generation in MOSFETs,” IEEE Transaction on Electronic Device, 56 (2), 267-273, 2009.
  45. Ming-Fu Li, D. Huang, W. J. Liu, Z. Y. Liu, Y. Luo, C. C. Liao, L. F. Zhang, Z. H. Gan, W. Wong, “Issues and Controversies in NBTI Degradation and Recovery Mechanisms for p-MOSFETs with SiON Gate Dielectrics,” IEEE International Conference on Solid-State and Integrated-Circuit Technology, 2008, 604-607.
  46. Z. Y. Liu, D. Huang, W. J. Liu, C. C. Liao, L. F. Zhang, Z. H. Gan, Waisum Wong, and Ming-Fu Li, “Comprehensive Studies of BTI Degradations in SiON Gate Dielectric CMOS Transistors by New Measurement Techniques,” IEEE International Reliability Physics Symposium (IRPS), 2008, 733-734.
  47. W. Chen, W. J. Liu, M. Zhang, S. J. Ding, D. W. Zhang, and Ming-Fu Li, “Multi-stacked Al2O3/HfO2/SiO2 tunnel layer for high-density nonvolatile memory application,” Applied Physics Letters, 91,022908, 2007.

 

 

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