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王季陶
发表时间:2013-08-27 阅读次数:5796次

基本资料                                                                                                                                                                                   

籍贯:浙江省 杭州市                                          

出生年月:1933年5月

职称: 教授(退休)  

办公室地址: 微电子学楼B211室

电话:021-65642457

Email: jtwang@fudan.ac.cn

 

学习与工作经历

1951年7月                           上海市 南洋中学高中毕业;

1951年9月-1951年7月      上海市 交通大学化学系一年级;

1952年9月-1955年7月      上海市 复旦大学化学系二, 三, 四年级;

1955年7月                           复旦大学化学系本科毕业(有机化学专门化);

1955年7月至今                  复旦大学从事教学科研工作;

1955年-1966年                 化学系有机化学教研组从事教学科研工作;

1958年-1962年                 物理系高分子研究所和教研组教学任教;

1969年-1979年                 材料科学系从事教学科研;

1980年            提出的低压化学气相淀积的计算机工艺模拟模型,先后在国内外列为大会报告或特邀报告。该模型已经纳人多本半导体(或微电子)材料和工艺的教科书中作为教学内容。以低压人造金刚石气相生长的现代热力学耦合理论为突破口的现代热力学专著已经在国内外出版发行,并有国内外的肯定书评和引用,并由此提出全新的现代热力学完整分类系统,有力地推动了热力学学科的现代化发展。

1989年3月-1991年3月    在瑞典Uppsala大学做访问学者,;

1991年-至今                      在复旦大学电子工程系和微电子学系从事教学科研,具有跨学科从事教学和科研的能力。

 

学术兼职

曾担任中国真空学会薄膜专业委员会委员, 化学气相淀积学组组长;

曾担任1999年第1届亚洲化学气相淀积(Chemical Vapor Deposition, CVD)国际会议主席;

曾担任1985年第1届和1987年第2届全国化学气相淀积(Chemical Vapor Deposition, CVD)研讨会主席。

 

科研成果(包括产业化的成果)及获得的荣誉奖项

序号

主要完成人

奖项名称

获奖等级

获奖时间

1

王季陶等

化学气相淀积多晶硅薄膜等

上海市高等教育局, 国庆30周年献礼科学技术成果奖

1979, 9, 25

2

王季陶等

热壁低压化学蒸汽淀积多晶硅技术

上海市重大科研成果奖

1980, 2

3

王季陶等

LPCVD生长Si3N4工艺

电子工业科学技术优秀成果奖

1982, 3

4

王季陶等

低压化学蒸汽淀积(LPCVD)氮化硅薄膜工艺技术(设备,工艺, 气体)

上海市重大科技成果奖二等奖

1982, 7

5

王季陶等

低压化学蒸汽淀积新的原料及工艺

国家发明奖四等奖章和证书

1983, 6

6

王季陶等

低压化学蒸汽淀积薄膜生长技术及设备

国家经济委员会1983年优秀新产品金龙奖章和证书

1983

7

王季陶等

扩散炉等离子化学蒸汽淀积薄膜生长技术及设备

国家经济委员会1983年优秀新产品金龙奖章和证书

1983

8

王季陶等

扩散炉等离子化学蒸汽淀积(PCVD)薄膜生长技术及设备

上海市优秀新产品二等奖

1983, 12

9

王季陶等

扩散炉等离子低压化学蒸汽沉积薄膜工艺及设备(PCVD)

1983年电子工业科技成果二等奖

1983, 12

10

王季陶等

低压化学蒸汽淀积设备

国家科学技术进步二等奖

1985

11

王季陶等

低压化学蒸汽淀积的计算机模拟理论

1986年上海市科学术技进步奖叁等奖

1987, 3

 

主要论文列表:

Papers on LPCVD:

L-1. J.-T. Wang, Y.-J. Lu: "Low pressure chemical vapor deposition (LPCVD) of thin films and their computer simulation" (plenary talk). In: Integrated Circuits and Semiconductor Materials. Abstracts of 1st National Conference at Fuzhou, China, Dec., 1979 (Chinese Electronics Society) no TOC

L-2. 王季陶: “低压化学蒸汽淀积 (LPCVD) 的计算机模拟”, 半导体学报,1(1), 6-15 (1980); 被美国物理学会 (American Institute of Physics) 翻译并转载于J.-T. Wang: "Computer simulation of low pressure chemical vapor deposition". Chinese Physics, 1(2), 461-471 (1981) no English TOC and cover
L-3. 王季陶,吕以金: “用低压化学蒸汽淀积技术制取多晶硅薄膜”,电子与自动化, 1980(4), 16-21 (1980) no TOC
L-4. 吕以金,王季陶:“低压化学蒸汽淀积 (LPCVD) 多晶硅及其在MOS大规模集成电路中的应用”,上海半导体,低压化学汽相淀积技术制取多晶硅薄膜,1980(2), 1-9 (1980) no TOC
L-5. 王季陶: “低压化学蒸汽淀积的计算机模拟” (研究通信) ,自然杂志, 3(4), 316 (1980) no TOC
L-6. 王季陶,承焕生,吕以金: “SiCl4/SiH4-NH3 体系的低压化学蒸汽淀积 (LPCVD) 氮化硅薄膜研究”, 半导体学报, 2(1), 78-80 (1981)
L-7. 王季陶, 王焕杰等: “低压化学蒸汽淀积 (LPCVD) 多晶硅/氮化硅设备”. 电子与自动化, 1981(2), 15-17 (1981) no TOC
L-8. 王季陶, (?): “免腐蚀法低压化学蒸汽淀积多晶硅工艺”. 半导体技术, 1981(1), 52 (1981) No
L-9. J.-T. Wang, Z.-Y. Shen, H.-J. Bao, H.-J. Wang, K.-C. Jiang, X.-K. Miao: “高纯硅烷气的制备”. 半导体技术, 1981(5), 7-9 (1981) no TOC
L-10. 王季陶: “低压化学蒸汽淀积 (LPCVD) 的计算机模拟通式” (研究通信),自然杂志, 4(1), 77 (1981) no TOC
L-11. J.-T. Wang, Z.-Y. Shen, G.-Z. Fu et al..: "Uniformity of LPCVD silicon nitride and general formulae of computer simulation of LPCVD". In: Integrated Circuits and Semiconductor Materials. Abstracts of the 2nd National Conference at Guangzhou, China, Dec. 1981 (Chinese Electronics Society) p. 109. no TOC, maybe another talk missed
L-12. H.-S. Cheng, Z.-W. Xu, G.-G. Zhao, Z.-Y. Zhou, Y.-H. Ren, J.-T. Wang: "背散射和核反应技术用于氮化硅薄膜研究” 半导体学报,3(1), 62-67 (1982) no TOC and cover
L-13. 戴道宣i, Y.-F. Ling, 王季陶, D.-X. Wang, X.-W. Dong, 罗兴华: “氮化硅薄膜 AES 研究”. 复旦学报 (自然科学版), 21(4), 468-473 (1982) no TOC and cover
L-14. J.-T. Wang: "低压化学蒸汽淀积 (LPCVD) 薄膜技术的计算机模拟通式". 中国科学, A辑, 中文版, 1983(1): 89-97 (1983);  English edn., 26(3): 283-283 (1983) no Chinese and English TOC
L-15. J.-T. Wang, H.-J. Wang, M.-H. Liang, W.-X. Ni, S.-L. Zhang: “扩散炉等离子化学蒸汽淀积系统生长氮化硅膜的研究”,复旦学报 (自然科学版), 22(4), 361-366 (1983)
L-16. D.-X. Dai, J.-T. Wang, M.-R. Yu, Y.-W. Pang: “LPCVD氮化硅表面氧化膜的 XPS 研究”. 复旦学报 (自然科学版), 22(4), 373-376 (1983)
L-17. J.-T. Wang, H.-J. Wang, M.-H. Liang, W.-X. Ni, S.-L. Zhang: “扩散炉 PCVD 技术生长氧化硅薄膜”. 半导体杂志, 1983(3), 1-4 (1983) no TOC
L-18. J.-T. Wang, H.-J. Wang, M.-H. Liang et al.: "Deposition of passivation films by LPCVD type PCVD technology", pp. 276-277; S.-L. Zhang, J.-T. Wang: "Discussion on three dimensional simulation of LPCVD", pp. 383-385; In: Integrated Circuits and Semiconductor Materials. Abstracts of the 3rd National Conference at Hefei, China, Oct., 1983 (Chinese Electronics Society) no TOC
L-19. J.-T. Wang, S.-L. Zhang, H.-J. Wang, M.-H. Liang: “Three-dimensional computer simulation of low pressure chemical vapor deposition”. Chinese J. Semiconductors, 5(6), 621-630 (1984)
L-20. H.-S. Cheng, J.-T. Wang, Z.-Y. Zhou, Z.-W. Xu, Y.-H. Ren, S.-L. Zhang: “Analysis of hydrogen content in plasma-deposited silicson nitride films”. Acta Electronica Sinica, 12(6), 63-67 (1984) rescan
L-21. D.-X. Dai, R.-F. Lin, J.-T. Wang, X.-W. Dong, X.-H. Luo: “低压化学汽相淀积 (LPCVD) 氮化硅薄膜的AES 研究”. 真空科学与技术, 1984(1), 8-11 (1984); English edn., 4(1), 1-5 (1984) no TOC and no English TOC and cover
L-22. J.-T. Wang, S.-L. Zhang, H.-J. Wang, M.-H. Liang: “三维LPCVD 计算机模拟” (研究通信) ,自然杂志, 7(4), 315-316 (1984) no TOC
L-23. J.-T. Wang, S.-L. Zhang, H.-J. Wang, M.-H. Liang: “Three-dimensional computer simulation of low pressure chemical vapor deposition”. In: Chemical Vapor Deposition, The 5th European Conference at Uppsala, Sweden, June 17-20, 1985. ed. by J.-O. Carlsson, J. Lindstrom, Dept. of Chemistry, Uppsala Univ., 1985, pp. 99-106
L-24. J.-T. Wang, S.-L. Zhang, H.-S. Chen, “Thermodynamical study on CVD silicon nitride”. In: Chemical Vapor Deposition, The 5th European Conference at Uppsala, Sweden, June 17-20, 1985. ed. by J.-O. Carlsson, J. Lindstrom, Dept. of Chemistry, Uppsala Univ., 1985, pp. 199-206
L-25. J.-T. Wang, S.-L. Zhang, Y.-F. Wang: “Theoretical model of LPCVD thickness distribution and comparison between model and experiments”. Solid-State Electronics, 29(10), 999-11004 (1986) no TOC and cover
L-26. J.-T. Wang, S.-L. Zhang: “The general formulae of three-dimensional computer simulation of low pressure chemical vapor deposition”. Scientia Sinica, Series A, Chinese edn., 1986(11), 1213-1222 (1986); English edn., 30(5), 523-534 (1986) no English TOC and cover
L-27. S.-L. Zhang, J.-T. Wang: “A thermodynamics study of system Si-H-Cl-O”. J. Fudan University (Natural Science), 25(2), 176-184 (1986)
L-28. J.-T. Wang, S.-L. Zhang, Y.-F. Wang: “Computer simulation of film thickness distribution in LPCVD process”. In: Semiconductor and Integrated Circuit Technology, The International Conference at Beijing, China, 1986. ed. by X.-Y. Wang, B.-X. Mo, World Scientific, 1986, pp. 5.232-5.234
L-29. J.-T. Wang, S.-L. Zhang, Y.-F. Wang: “Theoretical model of LPCVD thickness distribution and comparison between model and experiments”. In: Chemical Vapor Deposition, The 10th International Conference at Hawaii, USA, Oct. 1987. ed. by G.-W. Cullen, J. M. Blocher, Jr. (The Electrochemical Society, Pennington, 1987) PV87-8, 1987, pp. 23-32
L-30. Y.-F. Wang, S.-L. Zhang, J.-T. Wang: “Integral expression of film thickness distribution in LPCVD process”. In: Chemical Vapor Deposition, The 10th International Conference at Hawaii, USA, Oct. 1987. ed. by G.-W. Cullen, J. M. Blocher, Jr. (The Electrochemical Society, Pennington, 1987) PV87-8, 1987, pp. 951-959
L-31. F. Hong, Y.-F. Wang, H.-S. Cheng, B.-Z. Li, J.-T. Wang, “Study on selective chemical vapor deposition of W/Si system”. p. 17; Y.-F. Wang, S.-L. Zhang, Q. Zhou, J.-T. Wang, “Thermodynamic Study on chemical vapor deposition of tungsten silicide system”. p. 36; H.-R. Wang, H.-J. Wang, G.-L. Yu, J.-T. Wang, “Stability study on a-Si by programmable temperature increase method”. p. 39; Q. Zhou, W. Zhang, H.-J. Wang, Y.-F. Wang, D.-Z. Liu, X.-H. Luo, J.-T. Wang, “Study on PECVD-SiC thin films”. p. 40; J.-T. Wang, S.-L. Zhang, Y.-F. Wang, H.-J. Wang, Q. Zhou, W. Zhang: “Theoretical model of film thickness distribution in LPCVD process”. p. 41; In: Chemical Vapor Deposition, Abstracts of the 2nd National Symposium at Wuxi, China, 1987. (Thin Films Committee of Chinese Vacuum Society)
L-32. J.-T. Wang "Theoretical simulation of LPCVD"(plenary talk). In: Thin Solid Films, 1st National Conference at Changchun, China, Aug., 1988 (Chinese Electronics Society)
L-33. Y.-F. Wang, S.-L. Zhang, J.-T. Wang: “Analytical expression of deposition rate distribution in LPCVD”. Chinese J. of Semiconductors, 10(8), 592-600 (1989) no TOC and cover
L-34. D.-Z. Liu, X.-H. Luo, W. Zhang, J.-T. Wang: “AES study of a-SiC:H thin films formed by plasma-enhanced chemical vapor deposition”. Chinese J. of Semiconductors, 10(11), 859-864 (1989) no TOC and cover
L-35. J.-T. Wang, S.-L. Zhang, Y.-F. Wang, W. Zhang, Z.-C. Chen, K.-Y. Zhang, Y.-F. Wang: “Modeling of LPCVD silicon nitride process”. J. de Physique, Colloque C5, supplement au no5,  Tome 50, C5.67-C.72 (1989) no TOC and cover
L-36. Th. Eriksson, J.-T. Wang, J.-O. Carlsson, J. Keinonen, M. Ostling, C.S. Petersson: In: Semiconductor, 14th Nordic Meeting at Arhux, Denmark, June 17-20, 1990. ed. by O. Hansen, pp.284-287 no copy
L-37. Th. Eriksson, J.-T. Wang, J.-O. Carlsson, J. Keinonen, M. Ostling, C.S. Petersson: Applied Surface Science, 53, 35-40 (1991) no copy
L-38. H. Guo, Wei Zhang, J.-B. Zhu, C.-P. Su, J.-G. Wu, J.-T. Wang, F.-Y. Qu: “FTIR studies of SiCxNy;H thin films”. J. of Infrared and Millimeter Waves, 10(4), 253-258 (1991) no TOC and cover
L-39. S.-L. Zhang, J.-T. Wang, W. Kaplan, M. Ostling: “Silicon nitride films deposited from SiH2Cl2-NH3 by low pressure chemical vapor deposition: kinetics, thermodynamics, composition and structure”. Thin Solid Films, 213, 182-191 (1992) no TOC and cover
L-40. J.-T. Wang, S.-L. Zhang, Y.-F. Wang, K.-Y. Zhang, S.-Q. Xie: “Simulation model of LPCVD silicon nitride”. In: Process Physics and Modeling in Semiconductor Technology, The 3rd International Symposium at Hawaii, USA, May 1993. ed. by G.R. Srinivasan, K. Taniguchi, C.S. Murthy, (The Electrochemical Society, Pennington, 1993) PV93-6, 1993, pp. 357-368 with extended abstract, no TOC
L-41. B.-Q. Wang, J.-Y. Zhang, Z.-M. Bao, H.-J. Huang, J.-T. Wang: “The study on PECVD process and the characteristics of SiCxNy:H film”. J. of Functional Materials, 25(5), 412-415 (1994)
L-42. S.-Q. Xie, J.-T. Wang: "Study on deposition of silicon dioxide dielectric films by ozone oxidation under low temperature and low pressure conditions". In: Thin Solid Films, 4th National Conference at Beidaihe, China, Sept. 2-5, 1994, ed. by Chinese Electronics Society, pp. 13-14
L-43. C.-B. Cao, J.-T. Wang: "Low pressure chemical vapor deposition of metallic copper films". In: Thin Solid Films, 4th National Conference at Beidaihe, China, Sept. 2-5, 1994, ed. by Chinese Electronics Society, pp. 15-17,
L-44. J.-T. Wang, S.-Q. Xie: "Kinetic study on LPCVD silicon nitride". In: Thin Solid Films, 4th National Conference at Beidaihe, China, Sept. 2-5, 1994, ed. by Chinese Electronics Society, pp. 246-247
L-45. 张伟,承焕生, 王焕杰, 王永发,王季陶:“等离子增强化学蒸汽淀积硅化钛薄膜”, 第四届全国低压等离子学术会议论文集,pp. 188-189
L-46. 张伟,周庆,王永发,王焕杰,王季陶,刘德中:“等离子增强化学汽相淀积 SiCx:H 和 SiNxCy:H 薄膜的特点”, 固体电子学研究与进展,第一届全国微电子研究生学术研讨会论文专辑,8(4), pp. 357-359
L-47. 张伟,王季陶等:“PECVD SiCxNy 薄膜的制备和研究”,已投薄膜科学与技术 ? 

Papers on CVD Tungsten:

W-1. Y.-F. Wang, S.-L. Zhang, Q. Zhou, J.-T. Wang, Thermodynamic study on CVD of tungsten silicide”. In: Semiconductor and Integrated Circuit Technology, The International Conference at Beijing, China, 1986. ed. by X.-Y. Wang, B.-X. Mo, World Scientific, 1986, pp. 5.229-5.231
W-2. Y.-F. Wang, J.-T. Wang: “Chemical vapor deposition of tungsten and tungsten silicide films”. J. of Fudan University (Natural Science), 26(4), 454 (1987)
W-3. S.-L. Zhang, R. Buchta, Y.-F. Wang, E. Niemi, J.-T. Wang, C.S. Petersson: “Thermodynamic and experimental study of low pressure chemical vapor deposition of WSix”. In: Chemical Vapor Deposition, The 10th International Conference at Hawaii, USA, Oct. 1987. ed. by G.-W. Cullen, J. M. Blocher, Jr. (The Electrochemical Society, Pennington, 1985) PV87-8, 1987, pp. 135-144
W-4. Th. Eriksson, J.-T. Wang, J.-O. Carlsson, J. Keinonen, M. Ostling, C.S. Petersson, Proc. 14th Nordic Semiconductor Meeting, ed. O. Hansen, Arhus, Denmark, June 17-20, 1990, pp. 284-287
W-5. Th. Eriksson, J.-T. Wang, J.-O. Carlsson, J. Keinonen, M. Ostling, C.S. Petersson, Applied Surface Science, 53(1991), 36-40
W-6. Y.-F. Wang, S.-L. Zhang, J.-T. Wang: “Detailed mechanisms for influence of native oxide and formation of defects during selective W deposition”. In: Advanced Metallisation for ULSI Applications, Session D Selective Tungsten of Symposium at Murray Hill, New Jersey, Oct. 8-10, 1991. (Continuing Education in Eng., University Extension, University of California, Berkeley, 1991)
W-7. J.-T. Wang: “Formation mechanisms of defects and morphology in selective tungsten process”. In: Solid State and Integrated Circuit Technology, The 3rd International Conference at Beijing, China, Oct. 1992, ed. by R. Ellwanger, C.-C. Tsai, Y.-Y. Wang, B.-X. Mo, (publishing House of Electronics Industry, Beijing, 1992) pp. 60-62
W-8. J.-T. Wang "Three Theoretical Models for Chemical Vapor Deposition"(plenary talk). In: Thin Solid Films, 3rd National Conference at Guiling, China, Nov. 9-14, 1992, ed. by Chinese Electronics Society (Guangxi Normal University, Guiling, 1992) pp. 10-13
W-9. J.-T. Wang, K.-Y. Zhang, S.-L. Zhang: "Discussions on some problems in LPCVD tungsten process". In: Thin Solid Films, 3rd National Conference at Guiling, China, Nov. 9-14, 1992, ed. by Chinese Electronics Society (Guangxi Normal University, Guiling, 1992) pp. 337-338
W-10. J.-T. Wang, K.-Y. Zhang, C.-B. Cao, H. Wang: “Mechanisms for influence of native oxide and formation of defects during selective W deposition”. In: Chemical Vapor Deposition, The 12th International Symposium at Hawaii, USA, May 1993. ed. by K.F. Jensen, G.W. Cullen, (The Electrochemical Society, Pennington, 1993) PV93-2, 1993, pp. 257-263 with extended abstract
W-11. J.-T. Wang, K.-Y. Zhang, C.-B. Cao, H. Wang, S.-L. Zhang: “A half-sealed structure model for selective tungsten deposition process”. In: Chemical Vapor Deposition, The 12th International Symposium at Hawaii, USA, May 1993. ed. by K.F. Jensen, G.W. Cullen, (The Electrochemical Society, Pennington, 1993) PV93-2, 1993, pp. 283-290
W-12. J.-T. Wang, K.-Y. Zhang, H. Wang, Q. Qing: “Mechanisms of morphology  oxide residue and tungsten film in CVD tungsten process”. In: IC and Si Materials, The 8th National Symposium at Hangzhou, China, Oct. 1993. (The Chinese Electronics Society, Beijing, 1993) pp. 222-223
W-13. J.-T. Wang, K.-Y. Zhang, C.-B. Cao, H. Wang: “Understanding of selective tungsten deposition process, self-limiting growth, formation of micro-structure and other phenomena”. In: VLSI Multilevel Interconnection (VMIC), The 10th International Conference at Santa Clara, California, June 8-9, 1993. p. 401 no TOC

W-14. J.-T. Wang, C.-B. Cao, H. Wang, S.-L. Zhang: "On the Formation of Defects and Morphology during Chemical Vapor Deposition of Tungsten". J. Electrochemical Society, 141(8), 2192-2198 (1994). No
W-15. C.-B. Cao, J.-T. Wang, W.-J. Yu, D.-K. Peng, G.-Y. Meng: "Research on YSZ thin films prepared by plasma-CVD process". Thin Solid Films, 249, 163-167 (1994) no TOC and cover
W-16. J.-T. Wang, H. Wang, T.-S. Xu, B.-Q. Wang: "Progress of half-sealed structure model". In: Thin Solid Films, 4th National Conference at Beidaihe, China, Sept. 2-5, 1994, ed. by Chinese Electronics Society, p. 245
W-17. Q.-H. Yang, H. Wang, K. Wu, J.-T. Wang: “Investigation on low pressure vapor deposition of WF6-Ar tungsten film in CVD tungsten process”. In: IC and Si Materials, The 9th National Symposium at Xian, China, Nov. 1995. (The Chinese Electronics Society, Beijing, 1995) pp. 348-350

Papers on Activated CVD Diamond:

D-1. J.-T. Wang, J.-O. Carlsson: "A thermochemical model for diamond growth from the vapor phase". Surf. Coat. Technol., 43/44: 1-9 (1990) no cover and TOC
D-2. J.-T. Wang: "气相生长人造金刚石的化学泵模型". 薄膜科学与技术, 4(3): 64-67 (1991) no cover and TOC
D-3. J.-T. Wang "化学蒸气淀积的三个理论模型" (大会报告). 第三届全国固体薄膜学术会议论文集, 中国电子学会(广西师范大学, 桂林, 1992, 11, 9-14) pp. 10-13
D-4. J.-T. Wang, P.-J. Zheng, C.-B. Cao, G.-Y. Li: "A chemical pump model for diamond growth from the vapor phase." In: Diamond Mater, 3rd Internat. Symp. Honolulu, Hawaii, May 21-26, 1993, (The Electrochem Soc., Inc., 1993) PV93-17: pp. 962-967 with extended abstract
D-5. J.-T. Wang, P.-J. Zheng: "Thermodynamic coupling model for low pressure diamond syntheses". Supp. Issue of Chinese J. of Mater. Res. (I), Proc. of Inter. Union. of Mater. Res. Soc., Internat. Conf. in Asia, Sept 6-10, 1993, Wuhan-Chongqing, ed. by Y.-F. Han, Y. Huang, J.-M. Tian, P.-X. Wang (NSFC & C-MRS, 1993) pp. 363-368
D-6. J.-T. Wang, C.-B. Cao, P.-J. Zheng: "Theoretical aspects for low pressure diamond syntheses". J. Electrochem. Soc., 141(1): 278-281 (1994) no TOC
D-7. 王季陶, 王浩, 杨清河, 郑培菊: "低压人造金刚石的非平衡定态相图研究". '94秋季中国材料研讨会论文集(III), 新型材料及表面技术第三分册 (化学工业出版社, 北京, 1995), pp. 190-195. ISBN7-5025-1512-7/Z.55  no TOC
D-8. 王季陶: "用非平衡热力学开展材料科学研究". '94秋季中国材料研讨会论文集(IV), 材料加工及研究新技术第二分册 (化学工业出版社, 北京, 1995) pp. 496-499 ISBN7-5025-1512-7/Z.56 no TOC
D-9. 王季陶, 郑培菊: “人造金刚石低压合成的非平衡定态相图研究”, 科学通报, 40(11), 1056(1995); "Non-equilibrium phase diagram of stationary states for low-pressure diamond growth". Chinese Science Bulletin, Eng. ed., 40(13), 1141-1143 (1995). no Chinese and English TOC'
D-10. J.-T. Wang, P.-J. Zheng, Q.-H. Yang , H. Wang: "Phase diagram calculations of non-equilibrium stationary states for CVD diamond growth". In: Diamond Materials, 4th Internat. Symp., ed. by K. V. Ravi & J. P. Dismukes (The Electrochem Soc., 1995) PV 95-4: pp. 13-19 with extended abstract
D-11. 王季陶: "薄膜生长理论的一些进展", 薄膜科学与技术 (TFC '95 大会报告集), 8 (3): 275 (1995)
D-12. 王季陶, 王浩, 黄忠强, 杨清河, 张卫, 低压金刚石薄膜气相生长热力学的进一步研究, TFC'95 全国薄膜学术讨论会论文集, (中国真空学会薄膜专业委员会等, 北京, 1995, 10) pp. 87-88.
D-13. J.-T. Wang: "Chemical vapor deposition in China". In: Chemical Vapor Deposition, 13th Internat. Conf., at Los Angeles, May 5-10, 1996, ed. by T.M. Besmann, M.D. Allendorf, McD Robinson, R.K. Ulrich (The Electrochem Soc., Inc., Pennington, NJ, 1996) PV96-5: pp. 651-655
D-14. J.-T. Wang, Z.-Q. Huang, Q.-H. Yang, D.W. Zhang, Y.-Z. Wan: "Non-equilibrium thermodynamic coupling model for activated CVD diamond growth(1996). In: Chemical Vapor Deposition, 13th Inter. Conf. at Los Angeles, May 5-10, 1996, ed. by T.M. Besmann, M.D. Allendorf, McD. Robinson, R.K. Ulrich (The Electrochem Soc. Inc, Pennington, NJ, 1996) PV96-5: pp.727-732
D-15. 王季陶, 黄忠强, 张卫, 万永中, 刘志杰, “人造金刚石生长中的反应势垒研究”, ‘96中国材料研讨会论文摘要集(I-2), 功能材料, 金刚石相关材料,1996, 11, 17-21, 北京; ‘96中国材料研讨会, 化学工业出版社, ISBN 7-5025-1974-2/TQ.987, p. 365-369, 1997 with extended abstract
D-16. Y.-Z. Wan, D.W. Zhang, J.-T. Wang, Z.-Q. Huang: "Projective and cross-sectional phase diagrams for activated CVD diamond growth". In: 96 中国材料研讨会, 功能材料,I-3, 化学工业出版社,ISBN 7-5025-1974-2/TQ. '96 Materials Conference of Chinese Materials Research Soc., Session C (China-South Korea Internat. Session) at Beijing, Nov. 17-21, 1996 (Chemical Industry Press, Beijing, 1997) pp. 552-555987, p. 552-555, 1997. no TOC but with extended abstract
D-17. Z.-Q. Huang, D.W. Zhang, Y.-Z. Wan, H.-Y. Jia, J.-T. Wang: "Thermodynamic coupling effect and catalyst effect for the artificial diamond growth". presented as paper no. 8.064a at Diamond '96 Conference, Tours, France, Sept, 8-13, 1996
D-18. J.-T. Wang, D.W. Zhang, Y.-Z. Wan, Z.-Q. Huang: "Calculated phase diagrams for activated low-pressure diamond growth from C-H, C-O and C-H-O systems". presented as paper no. 8.092b at Diamond '96 Conference, Tours, France, Sept, 8-13, 1996
D-19. J.-T. Wang, Z.-Q. Huang, Y.-Z. Wan, D.W. Zhang, H-Y Jia: "Thermodynamic coupling effect and catalyst effect for the artificial diamond growth". J. of Materials Research, 12 (6): 1530-1535 (1997)
D-20. J.-T. Wang, Y.-Z. Wan, D.W. Zhang, Z.-J. Liu, Z.-Q. Huang: "Calculated phase diagrams for activated low pressure diamond growth from C-H, C-O and C-H-O systems". J. of Materials Research, 12 (12): 3250~3253 (1997)
D-21. D.W. Zhang, Y.-Z. Wan, J.-T. Wang: "Thermodynamic prediction of deposition parameters for diamond synthesis in atmospheric oxyacetylene flames". J. Crystal Growth 177 (1/2): 171-173 (1997)
D-22. D.W. Zhang, Y.-Z. Wan, Z.-J. Liu, J.-T. Wang: "Driving force for diamond deposition in the activated gas phase under low pressure". J. Mater. Sci. Lett. 16: 1349~1351 (1997) no cover and TOC
D-23. 王季陶, 黄忠强, 万永中, 张卫, 杨清河, 低压金刚石生长的非平衡定态三元投影相图, 科学通报,科学通报, 42 (7), 783-784 (1997); J.-T. Wang, Z.-Q. Huang, Y.-Z. Wan, D.W. Zhang, Q.-H. Yang "A projective ternary phase diagram of stationary non-equilibrium states for low-pressure diamond growth". Chinese Science Bulletin, Eng. ed., 42 (11), 967-968 (1997). no cover and TOC for Eng. & Chin.
D-24. 王季陶, 万永中, 张卫, 黄忠强, 郑培菊, “低压气相生长人造金刚石的热力学耦合理论模型”, 自然科学进展, 7 (4): 392-396 (1997); J.-T. Wang, Y.-Z. Wan, D.W. Zhang, Z.-Q. Huang, P.-J. Zheng: "Thermodynamic coupling model for low pressure diamond growth from the vapor phase". Progress in Natural Science, Eng. Edn., 7(3), 265-271(1997).
D-25. 张卫, 万永中, 王季陶, 人造金刚石低压气相生长的热力学研究, 自然科学进展, 7(2): 170-174 (1997); D.W. Zhang, Y.-Z. Wan, J.-T. Wang: "Thermodynamic analysis for vapor-growth diamond" Progress in Natural Science, 7 (4), 478-482 (1997). no Chinese cover and TOC
D-26. 张卫, 万永中, 王季陶, CO/H2体系低压气相生长金刚石的相图, 自然科学进展, Chinese edn., 7(5): 634-637 (1997); D.W. Zhang, Y.-Z. Wan, J.-T. Wang: "Phase diagrams for diamond growth from CO/H2 gas mixtures under low pressures". Progress in Nature Science, English edn., 7(4): 506-508 (1997)
D-27. Y.-Z. Wan, D.W. Zhang, Z.-J. Liu, J.-T. Wang: "Temperature dependence of diamond growth region in ternary C-H-O phase diagrams for diamond growth". High Technol. Lett. 3(2): 80~83 (1997)
D-28. 张卫, 王季陶, 万永中, 人造金刚石低压气相生长的相图计算, 物理学报, 46(6), pp.1237-1242 (1997)
D-29. 张卫, 万永中, 刘志杰, 王季陶, 金刚石低压气相生长的驱动力, 金属学报, 33(11), pp.1189-1193 (1997)
D-30. 张卫, 万永中, 王季陶, 低压下用CO+H2气体制备人造金刚石的相图计算, 无机材料学报, 12(3), pp.331-335 (1997)
D-31. 张卫, 万永中, 王季陶, 常压乙炔火焰制备金刚石的生长条件, 无机材料学报, 12(4), pp.617-619 (1997) no cover and TOC
D-32. 万永中, 刘志杰, 张卫, 王季陶, 碳氢氟体系低压金刚石相图, 微细加工技术, 4, pp.43-48, (1997)
D-33. J.-T. Wang, Y.-Z. Wan, Z.-J. Liu, D.W. Zhang, Z.-Q. Huang Comparison of phase diagrams with experiments of activated diamond growth from the vapor phase. Presented at 5th International Symposium on Diamond Materials, Aug. 31-Sept. 5, 1997, Paris, France
D-34. J.-T. Wang, Y.-Z. Wan, Z.-J. Liu, D.W. Zhang: "Theorem of phase diagram of stationary nonequilibrium states and its calculations". In: Phase Diagrams, 9th National Symp. at Beijing, Oct. 21-23, 1997, ed. by China University of Geosciences, and Commission of Phase Diagrams of Chinese Physical Society, pp. 17-19 
D-35. Y.-Z. Wan, J.-T. Wang, Z.-J. Liu, D.W. Zhang: "Phase diagram of stationary nonequilibrium states and its application in activated low-pressure diamond growth". In: Phase Diagrams, 9th National Symp. at Beijing, Oct. 21-23, 1997, ed. by China University of Geosciences, and Commission of Phase Diagrams of Chinese Physical Society, pp. 4-6 
D-36. J.-T. Wang, Y.-Z. Wan, Z.-J. Liu, H. Wang, D.W. Zhang, Z.-Q. Huang,: "Phase diagrams for activated CVD diamond growth". Materials Letters, 33: 311-314 (1998) no TOC
D-37. D.W. Zhang, Z.-J. Liu, Y.-Z. Wan, J.-T. Wang: "Phase diagrams for diamond growth in atmospheric oxyacetylene flames". Applied Physics A, 66: 49-51 (1998) no cover and TOC
D-38. Y.-Z. Wan, D.W. Zhang, Z.-J. Liu, J.-T. Wang: "Effects of temperature and pressure on CVD diamond growth from the C-H-O system". Applied Physics A, 67: 225-231 (1998) no cover and TOC
D-39. Y.-Z. Wan, D.W. Zhang, Z.-J. Liu, J.-Y, Zhang, J.-T. Wang: "Evaluation of the growth condition of chemical vapour deposition diamond under fluorine addition". Materials Chemistry and Physics, 56: 275-279 (1998) no cover and TOC
D-40. 万永中, 张卫, 王季陶, 黄忠强, 低压下C-H-O三元相图中金刚石生长区的边界探讨, 应用科学学报, 16(2), pp.185-190, (1998)
D-41. 万永中, 张卫, 刘志杰, 王季陶, 金刚石薄膜低压气相生长条件的理论预测, 人工晶体学报, 27(2), pp.109-113 (1998) no cover and TOC
D-42. 刘志杰, 张卫, 张剑云, 万永中, 王季陶, 氟原子参与的低压金刚石薄膜淀积条件, 人工晶体学报, 27 (3), pp.201-205 (1998)
D-43. 万永中, 张剑云, 刘志杰, 张卫, 王季陶, 碳-氢-氯体系金刚石薄膜生长条件预测, 材料研究学报, 12(6), pp.604-609 (1998)
D-44. 刘志杰, 张卫, 万永中, 王季陶, 激活温度对C-H体系低压金刚石生长条件的影响, 无机材料学报, 13(3), pp.432-434 (1998) No
D-45. 刘志杰, 张卫, 万永中, 王季陶, C-H-Cl气相体系生长金刚石的相图计算, 无机材料学报, 13(4), pp.634-636 (1998) No
D-46. 刘志杰, 张卫, 万永中, 王季陶, 不同压力下碳氢体系低压金刚石的非平衡定态系列相图, 无机化学学报, 14 (4), pp.412-417 (1998)
D-47. 刘志杰, 万永中, 张卫, 王季陶, 添加氧对低压金刚石生长条件的影响, 高等学校化学学报, 19(7), pp.1140-1143 (1998) No
D-48. 刘志杰, 张卫, 万永中, 王季陶, 卤素原子在化学气相淀积金刚石薄膜过程中的作用, 高技术通讯, 8 (6), pp.43-46 (1998)
D-49. 刘志杰, 张卫, 万永中, 张剑云, 王季陶, 曹传宝, 朱鹤孙, 氮原子在CVD低压金刚石制备过程中的作用, 高技术通讯, 8 (9), pp.36-39 (1998)
D-50. 刘志杰, 张卫, 万永中, 王季陶, 甲烷-氢气体系金刚石生长的热力学相图分析, 微细加工技术, No. 1, pp.69-73 (1998)
D-51. 刘志杰, 张卫, 万永中, 王季陶, 激活温度对C-H、C-O和C-H-O体系低压金刚石生长条件的影响, 功能材料, 29 (5), pp.506-508 (1998)
D-52. 刘志杰, 张卫, 张剑云, 万永中, 王季陶, 曹传宝, 朱鹤孙, C-H-N体系气相淀积金刚石薄膜的非平衡定态相图, 功能材料, 29(增刊), pp.1002-1003 (1998)
D-53. 刘志杰, 张卫, 万永中, 王季陶, 氧原子在化学气相淀积金刚石过程中的作用, 功能材料, 29(增刊), pp.1025-1027 (1998)
D-54. 王季陶, 非平衡定态相图新概念及其应用¾激活低压金刚石气相生长热力学, 物理, 27(2), pp.77-83 (1998)
D-55. 王季陶, 用负熵反应制取新材料, 物理, 27(9), pp.571-572 (1998) No
D-56. J.-T. Wang, D.W. Zhang, Z.-J. Liu, J-Y Zhang “Structure stability in plasma chemistry”. In: Plasma Deposition and Treatment of Polymers, Symposium of ’98 Fall Meeting of Materials Research Society, at Boston, Nov. 30 –Dec. 2, 1998, ed. by W.W. Lee, R. d’Agostino, M.R. Wertheimer, (Materials Research Society, Warrendale, 1998) SPV544, pp. 101-108  (2001) EI
D-57. J.-T. Wang, Y.-Z. Wan, Z.-J. Liu, D.W. Zhang, J-Y Zhang: “Low pressure growth of diamond films under fluorine addition (invited).”. In: Solid-State and Integrated Circuit Technology, at 5th International Conference, at Beijing, Oct. 21-23, 1998, ed. by M. Zhang, K.N. Tu, (Publishing house of Electronic Industry, IEEE Press, 1998) pp. 800-802 
D-58. J.-T. Wang, Z.-J. Liu, D.W. Zhang, J-Y Zhang, Y.-Z. Wan: “Thin films growth conditions for CVD diamond under low pressure”. In: Solid-State and Integrated Circuit Technology, at 5th International Conference, at Beijing, Oct. 21-23, 1998, ed. by M. Zhang, K.N. Tu, (Publishing house of Electronic Industry, IEEE Press, 1998)  pp. 819-821 
D-59. J.-T. Wang, D.W. Zhang, Z.-J. Liu, Y.-Z. Wan, J.-Y. Zhang: A new field of phase diagrams of stationary nonequilibrium states. In: Calculation of Phase Diagrams and its Application, 27th Internat Conference, at Beijing, May 1998
D-60. J.-T. Wang, P.-J. Zheng, D.W. Zhang, Z.-J. Liu, Y.-Z. Wan, J.-Y. Zhang, C.-B. Cao:  Negative entropy reactions for preparation of materials. In: Calculation of Phase Diagrams and its Application, 27th Internat Conference, at Beijing, May 1998
D-61. J.-T. Wang: Phase diagrams for the low pressure vapor growth of cubic boron nitride. In: Materials Science Research, vol.II, Abstract of ‘98 Chinese National Symposium, at Beijing, 1998, p. 519
D-62. J.-T. Wang: Prospect of nonequilibrium thermodynamics in materials science research in next century. In: Materials Science Research, vol.II, Abstract of ‘98 Chinese National Symposium, at Beijing, 1998, p.808
D-63. Z.-J. Liu, D.W. Zhang, J.-Y. Zhang, Y.-Z. Wan, J.-T. Wang: “Thermodynamic study on diamond film growth from fluorine-containing system”. In: Thin Solid Films, 6th National Conference at Chengdu, China, Sept. 1998, ed. by Chinese Electronics Society (Shichuan United University, Chengdu, 1998) pp. 79-81
D-64. 刘志杰, 张卫, 张剑云, 万永中, 王季陶, 曹传宝, 朱鹤孙, C-H-N体系气相淀积金刚石薄膜的非平衡定态相图, 第三届中国功能材料及其应用学术会议论文集, 1998, 10, 重庆, p.1002.
D-65. 刘志杰, 张卫, 万永中, 王季陶, 氧原子在化学气相淀积金刚石过程中的作用, 第三届中国功能材料及其应用学术会议论文集, 1998, 10, 重庆, p.1025.
D-66. Z.-J. Liu, D.W. Zhang, Y-Z Wan, J.-T. Wang: “Thermodynamics of diamond film deposition at low pressure from chlorinated precursors”. Applied Physics A 68(3): 359-362 (1999) no TOC
D-67. Z.-J. Liu, D.W. Zhang, J.-Y. Zhang, Y.-Z. Wan, J.-T. Wang: "Phase diagrams for CVD diamond deposition from halogen-containing gas phase". Thin Solid Films, 342: 42-46 (1999) no TOC
D-68. 王季陶, 张卫, 非生命体系中负熵反应和反应耦合的定量计算 ¾ 一个“简单”而又“神秘”的低压人造金刚石的热力学问题, 复旦学报, 38(1), pp.75-79, (1999)
D-69. 张卫, 王季陶, CH4/CO2体系化学气相淀积金刚石的非平衡定态相图计算, 复旦学报, 38(4), pp.410-415, (1999)
D-70. 万永中, 张志明, 沈荷生, 何贤昶, 张卫, 王季陶, C-H-N体系生长金刚石薄膜, 无机材料学报, 14(6), pp.840-846 (1999)
D-71. 刘志杰, 张卫, 张剑云, 万永中, 王季陶, 曹传宝, 朱鹤孙, 氯参与化学气相淀积金刚石的热力学分析, 高等学校化学学报, 20(1), pp.111-114, (1999) no cover and TOC
D-72. 刘志杰, 张卫, 张剑云, 丁士进, 王鹏飞, 王季陶, 非平衡定态相图在含氮体系低压金刚石沉积中的应用, 无机化学学报, 15(1), pp.132-134, (1999)
D-73. 刘志杰, 张卫, 万永中, 张剑云, 王季陶, 碳氢氧体系低压金刚石非平衡定态系列相图, 化学通报, No.2, pp.59-62, (1999)
D-74. 刘志杰, 张卫, 张剑云, 万永中, 王季陶, 含氟体系低压金刚石薄膜生长计算相图, 自然科学进展, 9(4), pp.378-380, (1999)
D-75. 刘志杰, 张卫, 张剑云, 万永中, 王季陶,  含氮体系CVD低压金刚石薄膜淀积条件, 无机材料学报, 14 (1), pp.114-118 (1999)
D-76. J.-T. Wang, D.W. Zhang: From activated CVD diamond to the life science (invited talk). In: Chemical Vapor Deposition, Abstracts of 1999 Asian Conference, May 10-13, Shanghai, paper no 1-6
D-77. J.-T. Wang: “Low pressure diamond films growth and its modern thermodynamics” (plenary talk). In: Thin Films, 1999 National Conference (TFC99’), Oct., Shanghai, pp. 75-76 [in Chinese]
D-78. D.W. Zhang, P.-F. Wang, S.-J. Ding, Z.-J. Liu, J.-Y. Zhang, J.-T. Wang,: "Calculation of nonequilibrium phase diagrams for CVD diamond growth from CH4 + CO2". In: Electron Beam, Ion Beam and Photon Beam, 10th National Conference, Nov. 1999, Changsha, Hunan, pp. 460-463 [in Chinese]
D-79. Z.-J. Liu, D.W. Zhang, P.-F. Wang, S.-J. Ding, J.-Y. Zhang, J.-T. Wang,: "Driving force for CVD diamond growth from carbon-hydrogen-chlorine systems". In: Electron Beam, Ion Beam and Photon Beam, 10th National Conference, Nov. 1999, Changsha, Hunan, pp. 464-467 [in Chinese]
D-80. J.-T. Wang, D.W. Zhang, S.-J. Ding, P.-F. Wang,: "A new field of phase diagrams of stationary nonequilibrium states". CALPHAD (J. of Calculated Phase Diagrams), 24: 427-434 (2000) no cover and TOC
D-81. Z.-J. Liu, S.-J. Ding, P.-F. Wang, D.W. Zhang, J.-Y. Zhang, J.-T. Wang: Effects of fluorine addition on driving force for CVD diamond growth. Thin Solid Films 368(2): 208-210 (2000)
D-82. Z.-J. Liu, D.W. Zhang, P.-F. Wang, S.-J. Ding, J.-Y. Zhang, J.-T. Wang: Projective phase diagrams for CVD diamond growth from C-H and C-H-O systems. Thin Solid Films 368(2): 253-256 (2000)
D-83. J.-Y. Zhang, P.-F. Wang, S.-J. Ding, D.W. Zhang, J.-T. Wang, Z.-J. Liu: Thermodynamic analyses of the effect of CH3 and C2H2 on morphology of CVD diamond films. Thin Solid Films, 368(2): 266-268 (2000)
D-84. 王季陶, 现代热力学简介, 物理, 29(9), pp.524-530, 2000
D-85. 张剑云, 王鹏飞, 丁士进, 张卫, 王季陶, 刘志杰, C-H体系CVD金刚石薄膜取向生长的热力学分析, 微细加工技术, No.3, pp.75-78,  (2000) page 74 missed, no cover and TOC
D-86. J.-T. Wang: “Modern Thermodynamics for Advanced Materials Research”. In: Eng. & Tech. Sci. 2000, Session 3 Adv. Materials, vol. 1, International Conf., Oct. 2000, Beijing, China, pp. 864-870
D-87. J.-T. Wang, S.-J. Ding, D.W. Zhang, J.-Y. Zhang, P.-F. Wang (2000) Modern Thermodynamics for Activated Cubic Boron Nitride Growth from the Vapor Phase. In: Eng. & Tech. Sci. 2000, Session 3 Adv. Materials, vol. 1, International Conf. Oct. 2000, Beijing, China, pp. 871-880
D-88. J.-T. Wang: Modern thermodynamics for phase diagrams of stationary states (invited talk). In: Phase Diagram Calculation (CALPHAD XXIX), Abstracts of The 29th International Conference, June 18-23, 2000, MIT, Cambridge, Massachusetts, p 8 rescan is needed.
D-89. J.-T. Wang, S-J Ding , D.W. Zhang, J-Y Zhang, P-F Wang: Calculation of phase diagrams of stationary states. In: Chemical Thermodynamics (ICCT-2000), Abstracts of the 16th IUPAC International Conf., Aug. 6-11, Dalhousie Univ., Halifax, Canada, p. 49 (2000)
D-90. J.-T. Wang: Systematization of modern thermodynamics. In: Chemical Thermodynamics (ICCT-2000), Abstracts of the 16th IUPAC International Conf., Aug. 6-11, Dalhousie Univ, Halifax, Canada, p. 150 (2000)
D-91. S.-J. Ding , J.-T. Wang, D.W. Zhang: Reaction coupling in modern thermodynamics. In: Chemical Thermodynamics (ICCT-2000), Abstracts of the 16th IUPAC International Conf., Aug. 6-11, Dalhousie Univ, Halifax, Canada, p. 151 (2000)
D-92. J.-T. Wang, S.-J. Ding , D.W. Zhang, J.-Y. Zhang, P.-F. Wang: “Modern Thermodynamics for shuttle reactions in biological systems”. In: Chemical Thermodynamics (ICCT-2000), Abstracts of the 16th IUPAC International Conf., Aug. 6-11, Dalhousie Univ, Halifax, Canada, p. 84 (2000)
D-93. J.-T. Wang, J.-Y. Zhang, S.-J. Ding, D.W. Zhang, P.-F. Wang: “Phase diagrams for activated CVD diamond and cubic BN”. In: Chemical Thermodynamics (ICCT-2000), Abstracts of the 16th IUPAC International Conf., Aug. 6-11, Dalhousie Univ, Halifax, Canada, p. 43 (2000)
D-94. J.-T. Wang: “Modern thermodynamics in materials science research” (invited talk). In: Materials Research (CMRS-2000), Abstracts of 2000 CMRS Meeting, Oct. 2000, Beijing, v.1, p. 438 [in Chinese]
D-95. J.-T. Wang: “A new field of modern thermodynamics arising from hard materials research” (invited talk). In: Materials Research (CMRS-2000), Abstracts of 2000 CMRS Meeting, Oct. 2000, Beijing, v.1, p. 496 [in Chinese]
D-96. J.-T. Wang, S.-J. Ding, D.W. Zhang, P.-F. Wang, J.-Y. Zhang: “Phase diagrams of stationary states – A new field of phase diagram calculation in modern thermodynamics”. In: Materials Research (CMRS-2000), Abstracts of 2000 CMRS Meeting, Oct. 2000, Beijing, v.2, p. 203 [in Chinese]
D-97. J.-T. Wang: “Modern Thermodynamics for Phase Diagrams of Stationary States”. In: Proc. of 10th National Symp. on Phase Diagram, Chinese Physical Society, Wuhu, Anhui, Sept. 25-28, 2000, pp. 135-138 [in Chinese]
D-98. J.-T. Wang, J.-Y. Shen, D.W. Zhang: “Modern thermodynamics in CVD of hard materials”. International J. Refractory Metals and Hard Materials, 19(4-6), 461-466 (2001)
D-99. 张剑云, 王鹏飞, 丁士进, 张卫, 王季陶, 刘志杰, CVD金刚石薄膜(111)与(100)取向生长的热力学研究, 功能材料, 32(2), pp.217-219, (2001) [in Chinese] rescan is needed.
D-100. J.-T. Wang: “Modern thermodynamics for activated chemical vapor deposition (CVD) processes”. In: Chemical Vapor Deposition, 2nd Asian Conference, at Gyeongju, Korea, May 28-31, 2001}, (Pohang University of Science and technology) pp. 63-66 rescan is needed
D-101. J.-T. Wang: “Modern thermodynamics in CVD of hard materials”. In: The Science of Hard Materials, 7th International Conference, at Ixtapa, Mexico, March 5-9, 2001, (PDVSA-Intevep, Venezuela, 2001) pp. 105-106 rescan of page 4-5 is needed           
D-102. J.-T. Wang: “Modern thermodynamics in CVD of hard materials”. In: Solid-State and Integrated Circuit Technology, 6th International Conference, at Shanghai, China, Oct. 22-25, 2001, ed. by B.-Z. Li, G.-P. Ru, X.-P. Qu, P. Yu, H. Iwai (Chinese Institute of Electronics, IEEE Beijing Section, 2001) pp. 1421- 1426
D-103. J.-T. Wang: “Progress of the second law of thermodynamics under promotion of thin film technology (invited talk)”. In: Abstract of 2001 Chinese Vacuum Society Meeting, at Beijing, Oct. 16-18, 2001, p. 21 [in Chinese]
D-104. J.-T. Wang: “A new field of nonequilibrium phase diagrams and nonequilibrium nondissipative thermodynamics (plenary talk)”. In: Phase Transformation and Solidification, 2001 National Conference, at Jiu-Hua Mountain, AnHui, Nov. 5-7, 2001}, (Materials Science Committee of Chinese Metallurgical Society) pp. 2-7 [in Chinese]
D-105. 王季陶: “反应耦合现象和现代热力学分类系统”. 大学化学, 17(2), 29-34 (2002)
D-106. J.-T. Wang, “Nonequilibrium Nondissipative Thermodynamics -- a New Field of Modern Thermodynamics”, Presented at: International Symposium on Frontiers of Science – in Celebration of the 80th Birthday of Chen Ning Yang (Tsinghua University, Beijing, 17-19 June 2002); Modern Physics Lett. B, 16(23&24), 885-888 (2002)
D-107. J.-T. Wang, Z.-K. Liu, D.W. Zhang: “Nonequilibrium Nondissipative Thermodynamics and its Application to Modern Inorganic Synthesis” (Keynote Lecture), Presented at: International Symposium on Solid State Chemistry in China (Changchun, 9-12 Aug, 2002); Published in: Frontiers of Solid State Chemistry, Eds. by S.H. Feng and J.S. Chen, World Scientific, Singapore, 2002, pp. 541-548.
D-108. 王季陶: “薄膜技术中的非平衡非耗散热力学”, 第8届全国固体薄膜学术会议论文摘要集, 2002年8月12-14日, 长春, 长春光机所主办,
D-109. 王季陶: “完整的热力学分类系统和非平衡非耗散热力学新领域”, 第11届全国化学热力学和热分析学术会议论文摘要集, 兰州, 2002年8月19-22日, p. 57.
D-110. 王季陶: “非平衡非耗散热力学及非平衡相图的计算”, 第11届全国计算相图学术会议论文集, 西宁, 2002年8月20-24日, pp. 131-134.
D-111. 王季陶, 张卫: “低压金刚石合成推进热力学全面进入现代热力学新阶段”, 2002年中国材料研讨会论文摘要集, 中国材料学会, 2002年10月21-24日, 北京, E56
D-112. 王季陶: “非平衡非耗散热力学”,  广西师范大学学报(自然科学版), 21, 70-71 (2002)
D-113. 王季陶:现代热力学的完整分类系统 --- 非平衡非耗散热力学新领域, 物理, 32(1), 9-15(2003)
D-114. 王季陶: “非平衡非耗散热力学及非平衡相图的计算”, 盐湖研究, 11(1), 62-65 (2003) (是D-106的出版物)
D-115. Ji-Tao Wang, David Wei Zhang: “Modern Thermodynamics for Low-Pressure Diamond and c-BN Syntheses”, Diamond VIII Symp. at 203rd ECS Meeting, April 29, 2003, Paris (因国内SASRS感染高潮, 未参加会议, 仅刊登在会议的Extended Abstract)
D-116. 王季陶: “21世纪“热力学与统计物理”课程应及时反映热力学领域中的基础性进展”, “热力学与统计物理”青年骨干教师培训班. 2003, 8, 18, 呼和浩特,
D-117. 王季陶: “非平衡非耗散热力学及生命是什么”, 第一届海峡两岸统计物理会议, 2003, 8, 27-31, 扬州
D-118. 王季陶: “非平衡可以是有序之源 --- 悼念Ilya Prigogine”, 2003年全国薄膜会议(TFC’03), 2003, 9, 14-18, 宁波
D-119. Ji-Tao Wang, David Wei Zhang and Wei-Feng Yu: “The Second Law of Thermodynamics for Advanced Thin Films”, Fifth Internat. Conf. on Thin Film Physics and Applications (TFPA2004), edited by Junhao Chu, Zongsheng Lai, Lianwei Wang, Shaohui Xu, Proc. of SPIE, Vol. 5774, 23-28 (2004); (SPIE, Belingham, WA, 2004) May 31- June 2, 2004, Shanghai
D-120. Ji-Tao Wang, David Wei Zhang and Wei-Feng Yu: “Progress in Studying the Second Law of Thermodynamics”, Internat. Conf. on Phys. Edu. & Frontier Research (OCPA 2004), June 28-July 1, 2004, Shanghai
D-121. Ji-Tao Wang: “New Progress in Studying the Second Law of Thermodynamics”, The 18th IUPAC Internat.Conf. on Chemical Thermodynamics (ICCT 2004), Aug. 17-21, Beijing
D-122. Ji-Tao Wang, David Wei Zhang, Wei-Feng Yu: “Modern Thermodynamics for CVD Diamond” Ninth Internat. Symp. On Diamond Materials, Oct. 8, 2004, Honolulu, Hawaii
D-123. 王季陶: “热力学第二定律研究的最新进展”, 第12届全国相图学术会议, 10月24-26日, 深圳 (收入论文集, 因故未参加)
D-124. Ji-Tao Wang: “A New Field of Nonequilibrium Nondissipative Thermodynamics” (plenary lecture), Abstracts of Russian International Conf. on Chemical Thermodynamics (RCCT2005), Jun. 27 - Jul. 2, 2005, Moscow, Russian, p.15. (简单数学, 分类)
D-125. 王季陶: “现代热力学 及热力学学科全貌”, 2005热力学与统计物理研讨会. 2005, 8, 8, 辽宁师范大学, 大连; J.-T. Wang. “Modern Thermodynamics and a whole view of thermodynamics”, 2005 National Symp. on Thermodynamics and Statistics. 2005, 8, 8, Dalian, China
D-126. Ji-Tao Wang, Pei-Ju Zheng: “The 2nd Law in Modern Thermodynamics”, The 19th Internat. Conf. on Chem. Thermodynamics (ICCT2006), Boulder, Colorado, 30 Jul – 4 Aug 2006,  p.548 (简单数学, 分类, 螺旋反应)
D-127. Ji-Tao Wang, Pei-Ju Zheng: “Thermodynamics for Carat-Size Diamond Synthesis”, The 19th Internat. Conf. on Chem. Thermodynamics (ICCT2006), Boulder, Colorado, 30 Jul – 4 Aug 2006, p.736 (克拉人工钻, 分类, 螺旋反应)
D-128. Ji-Tao Wang, Pei-Ju Zheng: “Extended Carnot Theorem”, The 19th Internat. Conf. on Chem. Thermodynamics (ICCT2006), Boulder, Colorado, 30 Jul – 4 Aug 2006, p.688
D-129. 王季陶: “21世纪的现代热力学”(大会报告), 2006热力学与统计物理研讨会. 2006, 7, 17, 兰州.
D-130. Ji-Tao Wang (王季陶): “Modern Thermodynamics of the 21st Century and Nonequilibrium Phase Diagrams for Carat-size Synthetic Diamond (21世纪的现代热力学及克拉人工钻的非平衡相图)”, Proc. of the 13th National Symp. on
Phase Diagrams 第13届全国相图学术会议论文集, 厦门, 2006年11月9日, p. 245. (克拉人工钻, 螺旋反应, 扩展卡诺原理)
D-131. 王季陶: “当前21世纪的热力学第二定律” (大会报告), 2007热力学与统计物理研讨会. 2007, 8, 6, 延吉; J.-T. Wang. “The Second Law of Thermodynamics in the Current 21st Century” (plenary lecture), 2007 National Symp. on Thermodynamics and Statistics. 2007, 8, 6, Yanji, China
D-132. J.-T. Wang: “Modern Thermodynamics in the Current 21st Century” The 20th Internat. Conf. on Chem. Thermodynamics (20th ICCT), Aug. 3-8, 2008, Warsaw Poland, p.223.
D-133. J.-T. Wang: “Mathematic Expressions of the Second Law of Thermodynamics in the Current 21st Century” The 20th Internat. Conf. on Chem. Thermodynamics (20th ICCT), Aug. 3-8, 2008, Warsaw Poland, p.359.
D-134. J.-T. Wang: “Modern Classification of Thermodynamics in the Current 21st Century” The 20th Internat. Conf. on Chem. Thermodynamics (20th ICCT), Aug. 3-8, 2008, Warsaw Poland, p.431
D-135. J.-T. Wang, Progress in Natural Science, 2009, 19: 125-135.
D-136. J.-T. Wang: “An Introduction to ‘Modern Thermodynamics in the Current 21st Century’”, The 5th Internat. Symp. on Calorimetry and Thermoal Analysis (CATS2008) 18-21 May 2008, Dalian,  China, p.58-60.
D-137. 王季陶,现代热力学---基于扩展卡诺定理(中英文版同名新书的简介) ,大会报告, 2009年高校 “热力学与统计物理”研讨会8月17日, 厦门.
D-138. J.-T. Wang: “A Small System of ATP Biosynthesis in Modern Thermodynamics” The 21st Internat. Conf. on Chem. Thermodynamics (21st ICCT), 31 Jul – 6 Aug 2008, Tsukuba, Japan, BT-3202-1640, p. 143
D-139. J.-T. Wang: “A New Discription of the Second Law of Thermodynamics”, The 21st Internat. Conf. on Chem. Thermodynamics (21st ICCT), 31 Jul – 6 Aug 2008, Tsukuba, Japan, ET-5101-1520, p. 338
D-140. J.-T. Wang: “A Complete and Basic Modern Classification of Thermodynamics” The 21st Internat. Conf. on Chem. Thermodynamics (21st ICCT), 31 Jul – 6 Aug 2008, Tsukuba, Japan, ET-5P-03, p. 341
D-141. J.-T. Wang: “Nonequilibrium Phase Diagrams in Modern Thermodynamics”, The 21st Internat. Conf. on Chem. Thermodynamics (21st ICCT), 31 Jul – 6 Aug 2008, Tsukuba, Japan, PE-4101-1200, p. 115

Papers on Low Dielectric Constant Materials:

K-1. P.-F. Wang, S.-J. Ding, D.W. Zhang, J.-Y. Zhang, J.-T. Wang: “FTIR characterization of fluorine doped silicon dioxide thin films deposition by plasma enhanced chemical vapor deposition”, Chinese Physics Letters, 17(12), 912-914 (2000) 
K-2. S.-J. Ding, P.-F. Wang, D.W. Zhang, J.-T. Wang, W.W. Lee, Y.-W. Zhang, Z.F. Xia: Porous amorphous fluoropolymer with ultralow dielectric constant. Chinese Physics (oversea edn.), 9 (10), 778-782 (2000)
K-3. 丁士进,张卫,王鹏飞,张剑云,刘志杰,王季陶,低介电常数含氟氧化硅薄膜的研究,功能材料,31(5), 452-455 (2000)
K-4. 王鹏飞,丁士进,张卫,张剑云,王季陶,用PECVD制备掺氟氧化硅(SiOF)低介电常数薄膜,微电子学,30(5), 347-350 (2000).
K-5. P.-F. Wang, D.W. Zhang, J.-Y. Zhang, J.-T. Wang: “Organic films used as low k dielectric material in VLSI technology”, Microelectronic Technology, 28(1), 31-36 (2000)
K-6. P.-F. Wang, S.-J. Ding, J.-Y. Zhang, D.W. Zhang, J.-T. Wang, W.W. Lee: “Low-dielectric-constant a-SiOCF film for ULSI interconnection prepared by PECVD with TEOS/C4F8/O2”, Applied Physics A 72, 721-724 (2001) 
K-7. S.-J. Ding, Q.-Q. Zhang, D.W. Zhang, J.-T. Wang, Y.-D. Zhou, W.W. Lee: “XPS characterization of the interface between low dielectric constant amorphous fluoropolymer film and evaporation-deposition aluminum”, Applied Surface Science, 178, 140-148 (2001)
K-8. S.-J. Ding, P.-F. Wang, D.W. Zhang, J.-T. Wang, W.W. Lee: “The influence of Ar addition on the structure of an a-SiOCF prepared by plasma enhanced chemical vapor deposition”, J. Physics D. Applied Physics, 34, 155-159 (2001) 
K-9. S.-J. Ding, P.-F. Wang, X.-G. Wan, D.W. Zhang, J.-T. Wang, W.W. Lee: “Effects of thermal treatment on porous amorphous fluoropolymer film with a low dielectric constant”, Materials Scince and Engineering, B83, 130-136 (2001) 
K-10. S.-J. Ding, L. Chen, X.-G. Wan, P.-F. Wang, J.-Y. Zhang, D.W. Zhang, J.-T. Wang: “Structure characterization of carbon and fluorine-doped silicon oxide films with low dielectric constant”, Materials Chemistry and Physics, 71(2), 125-130 (2001) 
K-11. S.-J. Ding, Q.-Q. Zhang, D.W. Zhang, J.-T. Wang, W.W. Lee: “Copper metallization of low-dielectric-constant a-SiOCF films for ULSI interconnects”, J. Physics: Condens. Matter, 13, 6595-6608 (2001) 
K-12. S.-J. Ding, P.-F. Wang, D.W. Zhang, J.-T. Wang: “A novel structural amorphous fluoropolymer film with an ultra-low dielectric constant”. Materials Letters, 49, 154-159 (2001) 
K-13. S.-J. Ding, D.W. Zhang, J.-T. Wang, W.W. Lee: Low dielectric constant SiO2:C,F films prepared from Si(OC2H5)4/C4F8/Ar by plasma-enhanced CVD, Chemical Vapor Deposition, 7 (4), 142-146 (2001)
K-14. P.-F. Wang, S.-J. Ding, J.-Y. Zhang, D.W. Zhang, J.-T, Wang: An amorphous SiCOF film with low dielectric constant prepared by plasma enhanced chemical vapor deposition, Thin Solid Films, 385(1-2), 115-119 (2001).
K-15. S.-J. Ding, P.-F. Wang, D.W. Zhang, J.-T. Wang, W.W. Lee: Analysis of the X-ray photoelectron spectra of a-SiOCF films prepared by plasma-enhanced chemical vapor deposition, Chinese Physics (oversea edn.), 10 (4), 324-328 (2001)
K-16. P.-F. Wang, S.-J. Ding, D.W. Zhang, J.-T. Wang, W.W. Lee: Effects of O2 plasma treatment on the chemical and electric properties of low-k SiOF films, J. Materials Science and Technology, 17 (6), 643-645 (2001).
K-17. S.-J. Ding, Q.-Q. Zhang, D.W. Zhang, J.-T. Wang, Y.-D. Zhou, W.W. Lee: “Deposition of SiOF/a-C:F double layer films by PECVD for low dielectric constant interconnection dielectrics”, In: Semiconductor Technology, 1st International Conference, at Shanghai, China, May 27-30, 2001, ed. by M. Yang (The Electrochemical Society, Inc., Pennington, NJ, 2001) PV2001-17, vol. 2, pp. 226-233
K-18. 丁士进,王鹏飞,张剑云,张卫,王季陶,张冶文,夏钟福,非晶含氟聚合物薄膜的热稳定性,材料研究学报,15(2), 201-204 (2001)}
K-19. 丁士进,王鹏飞,张卫,王季陶,张冶文,夏钟福,蒸发淀积铝和Teflon AF薄膜间的相互作用,金属学报,37(3),243-246 (2001)
K-20. 王鹏飞,丁士进,张卫,王季陶,李伟,ULSI低介电常数材料制备中的CVD技术,微细加工技术,No. 1, pp.30-36 (2001)
K-21. 丁士进,张庆全,张卫,王季陶,PECVD法淀积氟碳掺杂的氧化硅薄膜表征,无机材料学报,16(6), 1169-1173 (2001)
K-22. 王鹏飞,丁士进,张卫,张剑云,王季陶,超大规模集成电路中低介电常数SiOF薄膜,半导体技术,26(1), pp.37-39 (2001)
K-23. 丁士进,王鹏飞,张卫,王季陶,李伟,用于ULSI的低k氟化非晶碳膜研究,半导体技术,26 (5), 26-30 (2001)
K-24. 丁士进,张庆全,王鹏飞,张卫,王季陶,等离子体增强化学气相淀积a-SiCOF薄膜的稳定性研究,高技术通讯,11(11), 52-55 (2001)
K-25. 王鹏飞,丁士进,张卫,王季陶,李伟,低K介质对CMOS芯片动态功耗的影响,自然科学进展,11(3), 317-321 (2001).
K-26. 王鹏飞,丁士进,张卫,张剑云,王季陶,低介电常数含氟氧化硅(SiOF)薄膜的红外光谱分析,固体电子学研究与进展,21(4), 477-482 (2001)
K-27. 丁士进,王鹏飞,张卫,王季陶,李伟:低介电常数非晶氟碳薄膜光谱表征,光谱学与光谱分析,21(6), 747-748 (2001)

 

著作与授权专利列表

1. J.-T. Wang et al: "Selected Works on Chemical Vapor Deposition (I), Computer Simulation of Low Pressure Chemical Vapor Deposition". English edn. (Fudan University Press, Shanghai, 1985) 140 pages



1990
2. 王季陶, 刘明登. 半导体材料. 北京: 高等教育出版社,1990, 638页



1998
3. 王季陶, 张卫, 刘志杰. 金刚石低压气相生长的热力学耦合模型. 北京: 科学出版社, 1998. 共175 页



4. J.-T. Wang, D.W.Zhang: `Chap. 41 Ordinary Chemical Vapor Deposition (CVD)'. In: Handbook of Materials Surface Technology and Applications. ed. By M.-G. Qian (Mechanical Industry Press, Beijing 1998) pp. 744-756
5. S.-X. Zou, J.-T. Wang: `Chap. 42 Plasma Enhanced Chemical Vapor Deposition (PCVD)'. In: Handbook of Materials Surface Technology and Applications. ed. By M.-G. Qian (Mechanical Industry Press, Beijing 1998) pp. 757-775



1999
6. J.-T. Wang: `Chap. 2 Nonequilibrium Thermodynamics of Diamond Film Growth'. In: Some New Film Materials. ed. by J.-L. Wu, Q.-D. Wu (Beijing University Press, Beijing 1999) p. 24-38

7. J.-T. Wang, D.W. Zhang, Y.-Z. Wan: `Chapter 5 Thermodynamic Calculations for the Low Pressure Diamond Growth from the Vapor Phase'. In: Computerized Chemistry of Metallurgy and Materials. ed. by Z.-Y. Qiao, Z.-H. Xu, H.-L. Liu (Metallurgical Industry Press, Beijing 1999) pp. 129-146

2000
8. 季陶. 非平衡定态相图—人造金刚石的低压气相生长热力学. 北京: 科学出版社, 2000. 共212页



2001
9. J.-T. Wang: `Chap. 9 Chemical Vapor Deposition and Related Theories in Inorganic Synthesis and Materials Preparetion'. In: Inorganic Synthesis and Preparation Chemistry. ed. by R.-R. Xu, W.-Q. Peng (Higher Education Press, Beijing, 2001) pp. 257-285


 

10. “1.2.3. Kinetics for LPCVD Poly-Silicon Films”, written by Ji-Tao Wang, in: Poly-Crystalline Silicon Films and its Applications in Integrated Circuits, ed.by Y.-Y.Wang, T.I. Kamins, B.-Y. Chao et al., (Science Press, Beijing, 2001), pp.22-29.

2002
11. J.-T. Wang: Nonequilibrium Nondissipative Thermodynamics with application to low-pressure diamond synthesis, (Springer, Berlin, 2002) 254 pages (published on March 7, 2002)



2001
12. J.-T. Wang: `Chap. 9 Chemical Vapor Deposition and Related Theories in Inorganic Synthesis and Materials Preparetion'. In: Inorganic Synthesis and Preparation Chemistry. ed. by R.-R. Xu, W.-Q. Peng (Wu-Nan Publisher, Daibei, 2004) pp. 361-398



2005
13. 王季陶. 现代热力学--及热力学学科全貌. 上海: 复旦大学出版社. 2005. 共250 页



2009
14. J.-T. Wang: Modern Thermodynamics based on the extended Carnot theorem, (Science Press, Beijing, 2009) 279 pages (published in Sep. 2009)

 

15. J.-T. Wang: `Chap. 8 Chemical Vapor Deposition and Related Theories in Inorganic Synthesis and Materials Preparetion'. In: Inorganic Synthesis and Preparation Chemistry. 2nd ed., by R.-R. Xu, W.-Q. Peng, Q.-S. Huo (Higher Education Press, Beijing, 2001) pp. 280-314



2010
16. 王季陶. 现代热力学—基于扩展卡诺定理. 北京: 科学出版社 2010. 共301 页



2011
17. J.-T. Wang: `Chap. 7 CVD and its Related Theories in Inorganic Synthesis and Materials Preparations'. In: Modern Inorganic Synthetic Chemistry. ed. by Ruren Xu, Wenqin Pang, Qisheng Huo (Elsevier, Amsterdam, 2011) pp. 151-171


18. J.-T. Wang: Modern Thermodynamics based on the extended Carnot theorem, (Springer, 2011) 279 pages (published in Feb. 2011)


 


 

 

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