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陈琳
发表时间:2015-06-26 阅读次数:1282次

基本资料

    籍贯:安徽
    出生年月:1986年2月
    职称:副研究员
    地址:上海市邯郸路220号,复旦大学微电子楼307室
    电话:021-65643150
    Email:linchen@fudan.edu.cn

教育与工作经历

    20127月获复旦大学微电子学与固体电子学专业理学博士学位。20107-10月在德国弗劳恩霍夫研究所任访问学者。20127月–2014年8月,荷兰皇家飞利浦公司担任研发项目经理,高级研发工程师。201410月作为人才引进加入复旦大学微电子学院从事科研与教学工作。作为骨干成员参与国家02重大专项、国家自然科学基金、上海市科委重点项目。在国际主流学术期刊IEEE Electron Device LettersScientific Reports, Applied Physics Letters等发论文30余篇,担任美国电气和电子工程师协会期刊(IEEE Electron Device Lett, IEEE Trans. Electron Device.)、美国真空科学技术协会期刊(J. Vac. Sci. Technol. A)等国际期刊的论文审稿人

研究方向

  1. 集成电路领域新原理器件与新工艺研究
  2. 下一代非挥发存储器件与工艺技术开发
  3. 纳米CMOS器件先进栅介质与原子层化学气相淀积(ALD)技术。

代表性著作/论文

  1. Peng Zhou, Lin Chen (陈琳),Hangbing Lv,Haijun Wan,Qingqing Sun, Chapter ‘Nonvolatile Memory Device: Resistive Random Access Memory’ in Book ‘Nano-Semiconductors Device and Technology’,Taylor & Francis Group,ISBN:978-1-4398-4835-7,2011,20千字.
  2. Ya-Wei Dai, Lin Chen (陈琳)*, Wen Yang, Qing-Qing Sun*, Peng Zhou, Peng-Fei Wang, Shi-Jin Ding, David Wei Zhang and Fei Xiao, Complementary Resistive Switching in Flexible RRAM Devices. IEEE Electron Device Lett.35 (2014) 915. (通信作者)
  3. Lin Chen (陈琳), Ya-Wei Dai, Qing-Qing Sun , Jiao-Jiao Guo, Peng Zhou, David Wei Zhang, Al2O3/HfO2 functional stack films based resistive switching memories with controlled SET and RESET voltages, Solid State Ionics. (2014) Volume 273, May 2015, Pages 66–69. (第一作者)
  4. Peng Zhou, Song-bo Yang, Qing-Qing Sun, Lin Chen (陈琳), Peng-Fei Wang, Shi-Jin Ding, David Wei Zhang, Direct Deposition of Uniform High-kappa Dielectrics on Graphene, Scientific Report, 4 (2014) 6448. (共同第一作者)
  5. Xu-Dong Chen, Lin Chen (陈琳)*, Qing-Qing Sun, Peng Zhou and David Wei Zhang, Hybrid density functional theory study of Cu(In1-xGax)Se2 band structure for solar cell application. AIP ADVANCES,4 (2014) 087118. (通信作者)
  6. Song-bo Yang, Peng Zhou, Lin Chen (陈琳), Qing-Qing Sun, , Peng-Fei Wang, Shi-Jin Ding, An-Quan Jiang and David Wei Zhang, Direct observation of the work function evolution of graphene-two-dimensional metal contacts, JOURNAL OF MATERIALS CHEMISTRY C, 2(2014) 8042.
  7. Shan Zheng,Wen Yang, Qing-Qing Sun, Lin Chen (陈琳)*, Peng Zhou, Peng-Fei Wang, Shi-Jin Ding, David Wei Zhang and Fei Xiao, Schottky barrier height reduction for metal/n-InP by inserting ultra-thin atomic layer deposited high-k dielectrics, Appl. Phys. Lett. 103, (2013) 261602. (通信作者)
  8. Lin Chen (陈琳), Wen Yang, Ye Li, Qing-Qing Sun, Peng Zhou, Hong-Liang Lu, Shi-Jin Ding, and David Wei Zhang, Resistive switching properties of plasma enhanced-ALD La2O3 for novel nonvolatile memory application, J. Vac. Sci. Technol. A 30(1), Feb 2012. (第一作者)
  9. Lin Chen (陈琳), Hong-Yan Gou, Qing-Qing Sun, Hong-Liang Lu, Peng-Fei Wang, Shi-Jin Ding, and David Wei Zhang, Enhancement of Resistive Switching Characteristics in Al2O3-Based RRAM with Embedded Ruthenium Nanocrystals, IEEE Electron Device Lett.32 (2011) 749. (第一作者)
  10. Lin Chen (陈琳), Yan Xu, Qing-Qing Sun, Han Liu, Jing-Jing Gu, Shi-Jin Ding, David Wei Zhang, Highly Uniform Bipolar Resistive Switching With Al2O3 Buffer Layer in Robust NbAlO-Based RRAM,IEEE Electron Device Lett. 31 (2010) 356. (第一作者)
  11. Lin Chen (陈琳), Yan Xu, Qing-Qing Sun, Peng. Zhou, Jing-Jing Gu, Shi-Jin Ding, David Wei Zhang, Atomic Layer Deposited HfLaO Based Resistive Switching Memories With Superior Performance, IEEE Electron Device Lett. 31 (2010) 1296. (第一作者)
  12. Lin Chen (陈琳), Qing-Qing Sun, Jing-Jing Gu, Yan Xu, Shi-Jin Ding and David Wei Zhang, Bipolar resistive switching characteristics of atomic layer deposited Nb2O5 thin films for nonvolatile memory application, Current Applied Physics, Volume 11, Issue 3, May 2011, 849-852. (第一作者)
  13. Qing-Qing Sun, Jing-Jing Gu, Lin Chen (陈琳), P. Zhou, Shi-Jin Ding, D.W. Zhang,Controllable Filament with Electric Field Engineering for Resistive Switching Uniformity, IEEE Electron Device Lett.. 32 (2011) 1167.
  14. Y. Xu, Lin. Chen (陈琳), Qing-Qing Sun, H. Liu, J.-J. Gu, S.-J. Ding, D.W. Zhang, Electronic structure and optical properties of Nb doped Al2O3 on Si by atomic layer deposition, Solid State Communications. 150 (2010)1690.
  15. H. Liu, Lin. Chen (陈琳), Qing-Qing Sun, J.-J. Gu, S.-J. Ding, D.W. Zhang ,Band Structures of Metal-Oxide Capped Graphene: A First Principles Study. Chinese Physics Letters, 7 (2010) 077201.
  16. Yan Xu, Lin Chen (陈琳), Qing-Qing Sun, Peng-Fei Wang, Shi-Jin Ding, and David Wei Zhang,Initial reaction mechanism of H-passivated Ge surface passivation by atomic layer deposition of Al2O3 and AlN, Thin Solid Films, 519 (2011) 6000.
  17. Jian-Shuang Liu, Yang Geng, Lin Chen (陈琳), Qing-Qing Sun,Peng Zhou Hong-Liang Lu,  David Wei Zhang, Nitridation of atomic-layer-deposited HfO2/Al2O3 stacks by NH3 annealing. Thin Solid Films 529 (2013) 230-233.
  18. Wen Yang, Qing-Qing Sun,RC Fang, Lin Chen (陈琳), P. Zhou, S.-J. Ding, D.W. Zhang The thermal stability of atomic layer deposited HfLaOx: Material and electrical characterization.Current Applied Physics, Volume 12, Issue 6, Nov 2012, 1445-1447.
  19. Yong-Jun Li, Qing-Qing Sun, Lin Chen (陈琳), P. Zhou, PF Wang, S.-J. Ding, D.W. Zhang Hexagonal boron nitride intercalated multi-layer graphene: a possible ultimate solution to ultra-scaled interconnect technology. AIP ADVANCES, Volume 2, Issue 1,MAR 2012, 012191.

Copyright 2012 复旦大学微纳电子器件与工艺实验室 技术支持:维程互联

地址:上海市邯郸路220号 邮编:200433