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孙清清
发表时间:2015-09-12 阅读次数:6229次

    基本资料

    籍贯:浙江慈溪
    出生年月:1981.2
    职称:研究员
    办公室地址: 复旦大学邯郸校区微电子楼404
    电话:021-55664609
    Email: qqsun@fudan.edu.cn

 

    教育与工作经历

    孙清清,男,博士,微电子学院研究员、博士生导师、国家“万人计划”青年拔尖人才,国家自然科学基金优秀青年科学基金,上海市青年科技启明星计划获得者。分别于2004 年、2009 年获复旦大学学士、博士学位。

     2009 年起,在复旦大学微电子学科工作,任讲师,2011 年晋升为副研究员,2013 年破格晋升为研究员,主要从事微电子器件和集成电路工艺的研究。目前孙清清是多项国家科技重大专项,自然科学基金,教育部博士点基金的负责人或首席专家,在微电子工艺和器件领域的顶级期刊和会议上发表论文80余篇,其中国际著名期刊Science 论文1 篇, Applied physics letters(影响因子3.841)论文10 篇, IEEE Electron Device Letters (影响因子2.761)论文5 篇。孙清清还拥有21项中国专利,6 项美国专利。

 

    研究方向:

       1、集成电路先导工艺,包括原子层淀积、铜互连技术等
       2、高性能存储器件,包括半浮栅晶体管、阻变存储器等
       3、二维半导体材料与器件


    主持的项目:

        1、国家级项目

  • 国家科技重大专项课题“65-45nm PVD工艺优化的理论和实验研究”
  • 国家科技重大专项课题“32-22nm高k/金属栅纳米叠层材料制备工艺研究”
  • 自然科学基金委重大科学仪器研制项目课题“二维电子材料及纳米量子器件的研究和原位分析仪器”
  • 国家高技术研究发展计划(863计划)子课题“14纳米以下技术代硅基新型器件及关键工艺技术研究”
  • 自然科学基金优秀青年科学基金“低功耗电子器件”
  • 自然科学基金面上项目“高k介质/拓扑绝缘体界面结构的物理和电学特性研究”
  • 自然科学基金青年基金“原子层淀积栅介质/石墨烯纳米叠层的界面和电子结构”

        2、省部级项目

  •  教育部博士点基金“纳米超薄高k介质缺陷的物理特性及钝化研究”
  • 上海市教委晨光计划“原子层淀积高k/金属栅纳米叠层及功函数调制机理研究”
  • 上海市经信委产学研合作项目“先进技术节点CMOS图像传感器制造工艺开发”
  • 上海市科委青年科技启明星计划“基于半浮栅晶体管的图像传感器结构优化及器件模型”
  • 上海市科委科技创新行动计划“低缺陷大尺寸硅基氮化镓材料制备及功率器件研制”
   

    主要论文列表:

  1. P. F. Wang, X. Lin, L. Liu, Q. Q. Sun(孙清清), P. Zhou, X. Y. Liu, W. Liu, Y. Gong, and D. W. Zhang, "A Semi-Floating Gate Transistor for Low-Voltage Ultrafast Memory and Sensing Operation," Science, vol. 341, pp. 640-643, Aug 2013
  2. Q. Q. Sun(孙清清), L. H. Wang, W. Yang, P. Zhou, P. F. Wang, S. J. Ding, and D. W. Zhang, "Atomic Scale Investigation of a Graphene Nano-ribbon Based High Efficiency Spin Valve," Scientific Reports, vol. 3, Oct 2013.
  3. L. Chen, H. Y. Gou, Q. Q. Sun(孙清清), P. Zhou, H. L. Lu, P. F. Wang, S. J. Ding, and D. W. Zhang, "Enhancement of Resistive Switching Characteristics in Al2O3-Based RRAM With Embedded Ruthenium Nanocrystals," IEEE Electron Device Letters, vol. 32, pp. 794-796, Jun 2011.
  4. L. Chen, Y. Xu, Q. Q. Sun(孙清清), H. Liu, J. J. Gu, S. J. Ding, and D. W. Zhang, "Highly Uniform Bipolar Resistive Switching With Al2O3 Buffer Layer in Robust NbAlO-Based RRAM," IEEE Electron Device Letters, vol. 31, pp. 356-358, Apr 2010.
  5. L. Chen, Y. Xu, Q. Q. Sun(孙清清), P. Zhou, P. F. Wang, S. J. Ding, and D. W. Zhang, "Atomic-Layer-Deposited HfLaO-Based Resistive Switching Memories With Superior Performance," IEEE Electron Device Letters, vol. 31, pp. 1296-1298, Nov 2010.
  6. S. Chen, X. M. Cui, S. J. Ding, Q. Q. Sun(孙清清), T. Nyberg, S. L. Zhang, and W. Zhang, "Novel Zn-Doped Al2O3 Charge Storage Medium for Light-Erasable In-Ga-Zn-O TFT Memory," IEEE Electron Device Letters, vol. 34, pp. 1008-1010, Aug 2013.
  7. Y. W. Dai, L. Chen, W. Yang, Q. Q. Sun(孙清清), P. Zhou, P. F. Wang, S. J. Ding, D. W. Zhang, and F. Xiao, "Complementary Resistive Switching in Flexible RRAM Devices," IEEE Electron Device Letters, vol. 35, pp. 915-917, Sep 2014.
  8. [8]      Q. Q. Sun(孙清清), J. J. Gu, L. Chen, P. Zhou, P. F. Wang, S. J. Ding, and D. W. Zhang, "Controllable Filament With Electric Field Engineering for Resistive Switching Uniformity," IEEE Electron Device Letters, vol. 32, pp. 1167-1169, Sep 2011.
  9. Y. J. Li, M. D. Li, J. S. Liu, Q. Q. Sun(孙清清), P. Zhou, P. F. Wang, S. J. Ding, and D. W. Zhang, "Atomic scale investigation of the abnormal transport properties in bilayer graphene nanoribbon," Applied Physics Letters, vol. 100, Jan 2012.
  10. Y. Shen, P. Zhou, Q. Q. Sun(孙清清), L. Wan, J. Li, L. Y. Chen, D. W. Zhang, and X. B. Wang, "Optical investigation of reduced graphene oxide by spectroscopic ellipsometry and the band-gap tuning," Applied Physics Letters, vol. 99, Oct 2011.
  11. Q. Q. Sun(孙清清), W. Chen, S. J. Ding, M. Xu, H. L. Lu, H. C. Lindh-Rengifo, D. W. Zhang, and L. K. Wang, "Comparative study of passivation mechanism of oxygen vacancy with fluorine in HfO2 and HfSiO4," Applied Physics Letters, vol. 90, Apr 2007.
  12. Q. Q. Sun(孙清清), W. Chen, S. J. Ding, M. Xu, D. W. Zhang, and L. K. Wang, "Effects of chlorine residue in atomic layer deposition hafnium oxide: A density-functional-theory study," Applied Physics Letters, vol. 91, Jul 2007.
  13. Q. Q. Sun(孙清清), L. Dong, Y. Shi, H. Liu, S. J. Ding, and D. W. Zhang, "Atomic scale study of the degradation mechanism of boron contaminated hafnium oxide," Applied Physics Letters, vol. 92, Feb 2008.
  14. Q. Q. Sun(孙清清), Y. S. L. Dong, H. Liu, D. A. Shi-Jin, and D. W. Zhang, "Impact of germanium related defects on electrical performance of hafnium oxide," Applied Physics Letters, vol. 92, Mar 2008.
  15. Q. Q. Sun(孙清清), A. Laha, S. J. Ding, D. W. Zhang, H. J. Osten, and A. Fissel, "Observation of near interface oxide traps in single crystalline Nd(2)O(3) on Si(111) by quasistatic C-V method," Applied Physics Letters, vol. 93, Aug 2008.
  16. Q. Q. Sun(孙清清), A. Laha, S. J. Ding, D. W. Zhang, H. J. Osten, and A. Fissel, "Effective passivation of slow interface states at the interface of single crystalline Gd(2)O(3) and Si(100)," Applied Physics Letters, vol. 92, Apr 2008.
  17. Q. Q. Sun(孙清清), Y. J. Li, J. L. He, W. Yang, P. Zhou, H. L. Lu, S. J. Ding, and D. W. Zhang, "The physics and backward diode behavior of heavily doped single layer MoS2 based p-n junctions," Applied Physics Letters, vol. 102, Mar 2013.
  18. L. H. Wang, W. Yang, Q. Q. Sun(孙清清), P. Zhou, H. L. Lu, S. J. Ding, and D. W. Zhang, "The mechanism of the asymmetric SET and RESET speed of graphene oxide based flexible resistive switching memories," Applied Physics Letters, vol. 100, Feb 2012.
  19. S. Zheng, W. Yang, Q. Q. Sun(孙清清), L. Chen, P. Zhou, P. F. Wang, D. W. Zhang, and F. Xiao, "Schottky barrier height reduction for metal/n-InP by inserting ultra-thin atomic layer deposited high-k dielectrics," Applied Physics Letters, vol. 103, Dec 2013.
  20. Y. Shen, S. B. Yang, P. Zhou, Q. Q. Sun(孙清清), P. F. Wang, L. Wan, J. Li, L. Y. Chen, X. B. Wang, S. J. Ding, and D. W. Zhang, "Evolution of the band-gap and optical properties of graphene oxide with controllable reduction level," Carbon, vol. 62, pp. 157-164, Oct 2013.
  21. S. B. Yang, P. Zhou, L. Chen, Q. Q. Sun(孙清清), P. F. Wang, S. J. Ding, A. Q. Jiang, and D. W. Zhang, "Direct observation of the work function evolution of graphene-two-dimensional metal contacts," Journal of Materials Chemistry C, vol. 2, pp. 8042-8046, 2014.
  22. P. Zhou, H. Q. Wei, Q. Q. Sun(孙清清), P. F. Wang, S. J. Ding, A. Q. Jiang, and D. W. Zhang, "The tunable electrical properties of graphene nano-bridges," Journal of Materials Chemistry C, vol. 1, pp. 2548-2552, 2013.
  23. J. L. He, Q. Q. Sun(孙清清), H. L. Lu, P. F. Wang, S. J. Ding, and D. W. Zhang, "Distortion of electronic structure in HfO2 induced by the out-diffused As from GaAs substrate," Journal of Applied Physics, vol. 113, May 2013.
  24. Q. Q. Sun(孙清清), C. Zhang, L. Dong, Y. Shi, S. J. Ding, and D. W. Zhang, "Effect of chlorine residue on electrical performance of atomic layer deposited hafnium silicate," Journal of Applied Physics, vol. 103, Jun 2008.
  25. W. Yang, L. H. Wang, Y. Geng, Q. Q. Sun(孙清清), P. Zhou, S. J. Ding, and D. W. Zhang, "Atomic scale investigations of the gate controlled tunneling effect in graphyne nanoribbon," Journal of Applied Physics, vol. 114, Dec 2013.    

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